| Manufacturer | Description | Price Range | Set Alert | Details |
|---|---|---|---|---|
| Vishay Intertechnologies | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3 |
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| International Rectifier | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | $0.2400 / $2.9250 |
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| Vishay Siliconix | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, PLASTIC, IPAK-3 |
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| Samsung Semiconductor | Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3 |
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| Intersil Corporation | 8.4A, 100V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
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| Rochester Electronics LLC | 8.4A, 100V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
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| Harris Semiconductor | Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |
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| Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |
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| Thomson Consumer Electronics | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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