Part Details for IRFU120 by International Rectifier
Overview of IRFU120 by International Rectifier
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFU120
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 7 | 450 |
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$0.2400 / $0.7500 | Buy Now |
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Bristol Electronics | Min Qty: 2 | 450 |
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$1.0237 / $2.9250 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-251AA | 465 |
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$0.4200 / $0.9000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-251AA | 360 |
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$0.3000 / $1.0000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-251AA | 245 |
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$0.7500 / $1.5000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-251AA | 360 |
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$1.2675 / $3.9000 | Buy Now |
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Chip 1 Exchange | INSTOCK | 608 |
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RFQ |
Part Details for IRFU120
IRFU120 CAD Models
IRFU120 Part Data Attributes:
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IRFU120
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRFU120
International Rectifier
Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 210 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 7.7 A | |
| Drain-source On Resistance-Max | 0.27 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-251AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 42 W | |
| Power Dissipation-Max (Abs) | 42 W | |
| Pulsed Drain Current-Max (IDM) | 31 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFU120
This table gives cross-reference parts and alternative options found for IRFU120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFU120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFU120 | 8.4A, 100V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | Rochester Electronics LLC | IRFU120 vs IRFU120 |
| IRFU120 | Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3 | Samsung Semiconductor | IRFU120 vs IRFU120 |
| IRFU120PBF | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, ROHS COMPLIANT, PLASTIC, IPAK-3 | Vishay Siliconix | IRFU120 vs IRFU120PBF |
| IRFU120PBF | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | International Rectifier | IRFU120 vs IRFU120PBF |