Datasheets
IRFU5305PBF by:

Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3

Part Details for IRFU5305PBF by Infineon Technologies AG

Overview of IRFU5305PBF by Infineon Technologies AG

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Applications Automotive

Price & Stock for IRFU5305PBF

Part # Distributor Description Stock Price Buy
DISTI # 38K2689
Newark Mosfet, P-Ch, 55V, 22A, 175Deg C, 69W, Channel Type:P Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:22A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRFU5305PBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 585
  • 1 $1.0900
  • 10 $0.8880
  • 100 $0.6870
  • 500 $0.5790
  • 1,000 $0.4470
  • 2,500 $0.4320
  • 12,000 $0.4150
$0.4150 / $1.0900 Buy Now
DISTI # IRFU5305PBF
Avnet Americas Trans MOSFET P-CH 55V 31A 3-Pin(3+Tab) IPAK - Rail/Tube (Alt: IRFU5305PBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days Container: Tube 0
  • 3,000 $0.3322
  • 3,150 $0.3281
  • 6,150 $0.3241
  • 15,000 $0.3202
  • 30,000 $0.3164
$0.3164 / $0.3322 Buy Now
DISTI # 70017193
RS MOSFET, Power, P-Ch, VDSS -55V, RDS(ON) 0.065Ohm, ID -31A, I-Pak (TO-251AA),PD 110W | Infineon IRFU5305PBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 18
  • 1 $0.7400
  • 10 $0.7000
  • 50 $0.6600
  • 100 $0.6300
$0.6300 / $0.7400 Buy Now
Rochester Electronics IRFU5305 - 20V-250V P-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 786
  • 1 $0.4431
  • 25 $0.4342
  • 100 $0.4165
  • 500 $0.3988
  • 1,000 $0.3766
$0.3766 / $0.4431 Buy Now
DISTI # IRFU5305PBF
TME Transistor: P-MOSFET, unipolar, -55V, -28A, 89W, IPAK Min Qty: 1 2069
  • 1 $0.9600
  • 10 $0.8200
  • 50 $0.6900
  • 75 $0.6600
  • 150 $0.6300
$0.6300 / $0.9600 Buy Now
DISTI # C1S327400097327
Chip1Stop MOSFET RoHS: Compliant Container: Tube 41982
  • 5 $0.3980
  • 10 $0.3970
  • 50 $0.3950
  • 200 $0.3930
  • 500 $0.3920
$0.3920 / $0.3980 Buy Now
DISTI # SP001550274
EBV Elektronik Trans MOSFET P-CH 55V 31A 3-Pin(3+Tab) IPAK (Alt: SP001550274) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 19 Weeks, 0 Days EBV - 0
Buy Now
LCSC 55V 31A 0.06510V16A 110W 2V250uA 1 Piece P-Channel IPAK MOSFETs ROHS 64
  • 1 $0.9331
  • 10 $0.7915
  • 30 $0.7207
  • 100 $0.5492
  • 500 $0.5067
  • 1,000 $0.4847
$0.4847 / $0.9331 Buy Now
Win Source Electronics MOSFET P-CH 55V 31A I-PAK 15000
  • 85 $0.6135
  • 175 $0.5740
  • 275 $0.5542
  • 390 $0.5146
  • 510 $0.4948
  • 635 $0.4750
$0.4750 / $0.6135 Buy Now

Part Details for IRFU5305PBF

IRFU5305PBF CAD Models

IRFU5305PBF Part Data Attributes

IRFU5305PBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRFU5305PBF Infineon Technologies AG Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 280 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 31 A
Drain-source On Resistance-Max 0.065 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 69 W
Pulsed Drain Current-Max (IDM) 110 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFU5305PBF

This table gives cross-reference parts and alternative options found for IRFU5305PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFU5305PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SPD30P06PGBTMA1 Infineon Technologies AG $1.0448 Power Field-Effect Transistor, 30A I(D), 60V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 IRFU5305PBF vs SPD30P06PGBTMA1

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