Transistors
IRFW730BTM
Description: Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

Overview of IRFW730BTM by Fairchild Semiconductor Corporation

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Price & Stock for IRFW730BTM by Fairchild Semiconductor Corporation

Part # Manufacturer Description Stock Price Buy
DISTI # 2156-IRFW730BTM-ND
DigiKey N-CHANNEL POWER MOSFET Min Qty: 468 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 12957
In Stock
  • 468 $0.6400
$0.6400 Buy Now
Rochester Electronics 5.5A, 400V, 1ohm, N-Channel Power MOSFET, TO-263AB ' RoHS: Compliant Status: Obsolete Min Qty: 1 12957
  • 1 $0.6485
  • 25 $0.6355
  • 100 $0.6096
  • 500 $0.5837
  • 1,000 $0.5512
$0.5512 / $0.6485 Buy Now

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Part Data Attributes for IRFW730BTM by Fairchild Semiconductor Corporation

IRFW730BTM
Fairchild Semiconductor Corporation
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
D2PAK
Package Description
D2PAK-3
Pin Count
3
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
330 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
400 V
Drain Current-Max (ID)
5.5 A
Drain-source On Resistance-Max
1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
73 W
Pulsed Drain Current-Max (IDM)
22 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRFW730BTM
    Fairchild Semiconductor Corporation
    Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
    VS

Alternate Parts for IRFW730BTM

This table gives cross-reference parts and alternative options found for IRFW730BTM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFW730BTM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFW730BTM 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 Rochester Electronics LLC IRFW730BTM vs IRFW730BTM
Part Number Description Manufacturer Compare
IRFW730BTM 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 Rochester Electronics LLC IRFW730BTM vs IRFW730BTM

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