Part Details for IRFW740BTM by Rochester Electronics LLC
Overview of IRFW740BTM by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRFW740BTM
IRFW740BTM CAD Models
IRFW740BTM Part Data Attributes
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IRFW740BTM
Rochester Electronics LLC
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Datasheet
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IRFW740BTM
Rochester Electronics LLC
10A, 400V, 0.54ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Part Package Code | D2PAK | |
| Package Description | D2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| Avalanche Energy Rating (Eas) | 450 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.54 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Moisture Sensitivity Level | NOT SPECIFIED | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | YES | |
| Terminal Finish | NOT SPECIFIED | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFW740BTM
This table gives cross-reference parts and alternative options found for IRFW740BTM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFW740BTM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQB11N40CTM | 10.5A, 400V, 0.53ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, LEAD FREE, D2PAK-3 | Rochester Electronics LLC | IRFW740BTM vs FQB11N40CTM |
| UF740L-TQ2-T | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, 3 PIN | Unisonic Technologies Co Ltd | IRFW740BTM vs UF740L-TQ2-T |
| FQB11N40C | Power Field-Effect Transistor, 10.5A I(D), 400V, 0.53ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | onsemi | IRFW740BTM vs FQB11N40C |
| IRFW740B | Power Field-Effect Transistor, 10A I(D), 400V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | IRFW740BTM vs IRFW740B |
| UF740G-TQ2-R | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE, TO-263, 3 PIN | Unisonic Technologies Co Ltd | IRFW740BTM vs UF740G-TQ2-R |
| FQB11N40CTM | Power MOSFET, N-Channel, QFET®, 400 V, 10.5 A, 530 mΩ, D2PAK, 800-REEL | onsemi | IRFW740BTM vs FQB11N40CTM |
| UF740G-TQ2-T | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE, TO-263, 3 PIN | Unisonic Technologies Co Ltd | IRFW740BTM vs UF740G-TQ2-T |
| FQB11N40C | Power Field-Effect Transistor, 10.5A I(D), 400V, 0.53ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Fairchild Semiconductor Corporation | IRFW740BTM vs FQB11N40C |
| IRFW740BTM | Power Field-Effect Transistor, 10A I(D), 400V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | IRFW740BTM vs IRFW740BTM |
| FQB11N40CTM | Power Field-Effect Transistor, 10.5A I(D), 400V, 0.53ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | Fairchild Semiconductor Corporation | IRFW740BTM vs FQB11N40CTM |