Datasheets
IRFY440CM by:

Power Field-Effect Transistor, 7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, CERAMIC PACKAGE-3

Part Details for IRFY440CM by International Rectifier

Overview of IRFY440CM by International Rectifier

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Price & Stock for IRFY440CM

Part # Distributor Description Stock Price Buy
NexGen Digital   56
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Part Details for IRFY440CM

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IRFY440CM Part Data Attributes

IRFY440CM International Rectifier
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IRFY440CM International Rectifier Power Field-Effect Transistor, 7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, CERAMIC PACKAGE-3
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-257AA
Package Description HERMETIC SEALED, CERAMIC PACKAGE-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 510 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 7 A
Drain-source On Resistance-Max 0.85 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-257AA
JESD-30 Code S-XSFM-P3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape SQUARE
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 28 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form PIN/PEG
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFY440CM

This table gives cross-reference parts and alternative options found for IRFY440CM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFY440CM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFY440CMPBF Power Field-Effect Transistor, 7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, CERAMIC PACKAGE-3 International Rectifier IRFY440CM vs IRFY440CMPBF
IRFY440CM Power Field-Effect Transistor, 7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, CERAMIC PACKAGE-3 Infineon Technologies AG IRFY440CM vs IRFY440CM
Part Number Description Manufacturer Compare
SHD226405B Power Field-Effect Transistor, 5.5A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN Sensitron Semiconductors IRFY440CM vs SHD226405B
IRFY440-QR-EB 5.5A, 500V, 0.98ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited IRFY440CM vs IRFY440-QR-EB
IRFY440EPBF Power Field-Effect Transistor, 5.5A I(D), 500V, 0.98ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB International Rectifier IRFY440CM vs IRFY440EPBF
IRFY440MEAPBF 5.5A, 500V, 0.98ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB Infineon Technologies AG IRFY440CM vs IRFY440MEAPBF
IRFY440CSCVPBF Power Field-Effect Transistor, 5.5A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB International Rectifier IRFY440CM vs IRFY440CSCVPBF
IRFY440EAPBF 5.5A, 500V, 0.98ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB Infineon Technologies AG IRFY440CM vs IRFY440EAPBF
IRFY440R1 Power Field-Effect Transistor, 5.5A I(D), 500V, 0.98ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TT Electronics Resistors IRFY440CM vs IRFY440R1
IRFY440C-QR-B Power Field-Effect Transistor, 7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, TO-220MC, 3 PIN TT Electronics Resistors IRFY440CM vs IRFY440C-QR-B
IRFY440 5.5A, 500V, 0.98ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited IRFY440CM vs IRFY440
IRFY440C-JQR-B Power Field-Effect Transistor, 7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, TO-220MC, 3 PIN TT Electronics Resistors IRFY440CM vs IRFY440C-JQR-B

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