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Transistors Power Field-Effect Transistors IRFZ24SPBF

Transistors
IRFZ24SPBF
Description: Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3

Overview of IRFZ24SPBF by Vishay Siliconix

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Price & Stock for IRFZ24SPBF by Vishay Siliconix

Part # Manufacturer Description Stock Price Buy
DISTI # IRFZ24SPBF-ND
DigiKey MOSFET N-CH 60V 17A TO263 Min Qty: 1 Lead time: 15 Weeks Container: Tube 190
In Stock
  • 1 $3.1900
  • 10 $2.0730
  • 100 $1.4383
  • 500 $1.2045
  • 1,000 $1.0788
  • 2,000 $1.0383
  • 5,000 $1.0000
$1.0000 / $3.1900 Buy Now

CAD Models for IRFZ24SPBF by Vishay Siliconix
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Part Data Attributes for IRFZ24SPBF by Vishay Siliconix
Parametric Data

IRFZ24SPBF
Vishay Siliconix
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
VISHAY SILICONIX
Part Package Code
D2PAK
Package Description
ROHS COMPLIANT, TO-263, D2PAK-3
Pin Count
4
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
Vishay
Additional Feature
ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas)
100 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
17 A
Drain-source On Resistance-Max
0.1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
68 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
40
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IRFZ24SPBF
    Vishay Siliconix
    Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
    VS

Alternate Parts for IRFZ24SPBF

This table gives cross-reference parts and alternative options found for IRFZ24SPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFZ24SPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFZ24STRLPBF Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRFZ24SPBF vs IRFZ24STRLPBF
IRFZ24SPBF Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRFZ24SPBF vs IRFZ24SPBF
IRFZ24SPBF Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN Vishay Intertechnologies IRFZ24SPBF vs IRFZ24SPBF
IRFZ24STRRPBF Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Vishay Intertechnologies IRFZ24SPBF vs IRFZ24STRRPBF
IRFZ24STRL Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRFZ24SPBF vs IRFZ24STRL
IRFZ24STRR Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRFZ24SPBF vs IRFZ24STRR
Part Number Description Manufacturer Compare
IRFZ24SPBF Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN Vishay Intertechnologies IRFZ24SPBF vs IRFZ24SPBF
IRFZ24STRR Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRFZ24SPBF vs IRFZ24STRR
IRFZ24STRRPBF Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Vishay Intertechnologies IRFZ24SPBF vs IRFZ24STRRPBF
IRFZ24STRLPBF Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRFZ24SPBF vs IRFZ24STRLPBF
IRFZ24STRLPBF Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Vishay Intertechnologies IRFZ24SPBF vs IRFZ24STRLPBF
IRFZ24SPBF Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRFZ24SPBF vs IRFZ24SPBF

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