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Transistors / Power Field-Effect Transistors / IRFZ34NPBF
Datasheets
IRFZ34NPBF by:

Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Part Details for IRFZ34NPBF by Infineon Technologies AG

Results Overview of IRFZ34NPBF by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Renewable Energy

IRFZ34NPBF Information

IRFZ34NPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFZ34NPBF

Part # Distributor Description Stock Price Buy
DISTI # 63J7120
Newark N Channel Mosfet, 55V, 29A To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:29A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRFZ34NPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 61535
  • 1 $0.3430
  • 25 $0.3430
  • 100 $0.3140
  • 500 $0.2900
  • 1,000 $0.2520
  • 2,500 $0.2380
  • 10,000 $0.2250
  • 25,000 $0.2200
$0.2200 / $0.3430 Buy Now
DISTI # 63J7120
Avnet Americas Trans MOSFET N-CH 55V 29A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 63J7120) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 1 Days Container: Bulk 5949 Partner Stock
  • 1 $0.9420
  • 25 $0.7540
  • 100 $0.4530
  • 500 $0.3580
  • 1,000 $0.2620
$0.2620 / $0.9420 Buy Now
DISTI # IRFZ34NPBF
Avnet Americas Trans MOSFET N-CH 55V 29A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFZ34NPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Lead time: 8 Weeks, 0 Days Container: Tube 0
  • 2,000 $0.2445
  • 2,200 $0.2415
  • 4,200 $0.2385
  • 10,000 $0.2357
  • 20,000 $0.2329
$0.2329 / $0.2445 Buy Now
DISTI # 70017051
RS MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.04Ohm, ID 29A, TO-220AB, PD 68W, VGS +/-20V | Infineon IRFZ34NPBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 8
  • 1 $1.0300
  • 5 $0.9500
  • 10 $0.9100
  • 100 $0.8200
  • 250 $0.7700
$0.7700 / $1.0300 Buy Now
Bristol Electronics   11596
RFQ
DISTI # IRFZ34NPBF
TME Transistor: N-MOSFET, unipolar, 55V, 26A, 56W, TO220AB Min Qty: 1 504
  • 1 $0.8020
  • 10 $0.7060
  • 50 $0.5990
  • 100 $0.5540
  • 250 $0.4960
  • 500 $0.4550
  • 1,000 $0.4170
  • 2,000 $0.3810
  • 5,000 $0.3380
  • 10,000 $0.3090
$0.3090 / $0.8020 Buy Now
Ameya Holding Limited Single N-Channel 55 V 0.04 Ohm 34 nC HEXFET® Power Mosfet - TO-220-3 4000
RFQ
Chip-Germany GmbH   RoHS: Compliant 44
RFQ
DISTI # C1S322000497214
Chip1Stop Trans MOSFET N-CH Si 55V 29A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant Container: Tube 1920
  • 5 $0.2790
  • 50 $0.2770
  • 500 $0.2700
$0.2700 / $0.2790 Buy Now
CHIPMALL.COM LIMITED 55V 29A 68W 0.04@10V,16A 2V@250uA 1 N-Channel TO-220AB MOSFETs ROHS 3061
  • 1 $0.2762
$0.2762 Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2023 Date Code: 2023 1892
  • 1 $0.5200
  • 10 $0.3800
  • 50 $0.3600
  • 100 $0.3500
  • 500 $0.3500
  • 1,000 $0.3400
$0.3400 / $0.5200 Buy Now
DISTI # SP001568128
EBV Elektronik Trans MOSFET N-CH 55V 29A 3-Pin(3+Tab) TO-220AB (Alt: SP001568128) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 9 Weeks, 0 Days EBV - 0
Buy Now
LCSC 55V 29A 68W 0.0410V16A 2V250uA 1 N-channel TO-220AB MOSFETs ROHS 3396
  • 1 $0.3499
  • 10 $0.2849
  • 50 $0.2322
  • 100 $0.1982
  • 500 $0.1812
  • 1,000 $0.1719
$0.1719 / $0.3499 Buy Now
Win Source Electronics Trans MOSFET N-CH Si 55V 29A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 55V 29A TO-220AB 23400
  • 205 $0.2465
  • 435 $0.2306
  • 675 $0.2227
  • 970 $0.2068
  • 1,260 $0.1988
  • 1,575 $0.1909
$0.1909 / $0.2465 Buy Now

Part Details for IRFZ34NPBF

IRFZ34NPBF CAD Models

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IRFZ34NPBF Part Data Attributes

Parametric Data
IRFZ34NPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRFZ34NPBF Infineon Technologies AG Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 17 Weeks, 1 Day
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 65 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 29 A
Drain-source On Resistance-Max 0.04 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 68 W
Pulsed Drain Current-Max (IDM) 100 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFZ34NPBF

This table gives cross-reference parts and alternative options found for IRFZ34NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFZ34NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BUZ11 Rochester Electronics LLC Check for Price 30A, 50V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB IRFZ34NPBF vs BUZ11
Part Number Manufacturer Composite Price Description Compare
IRFZ34N Infineon Technologies AG Check for Price Power Field-Effect Transistor, 26A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRFZ34NPBF vs IRFZ34N
AUIRFZ34N Infineon Technologies AG Check for Price Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 IRFZ34NPBF vs AUIRFZ34N
AUIRFZ34N International Rectifier Check for Price Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 IRFZ34NPBF vs AUIRFZ34N
MTP36N06E Texas Instruments Check for Price 36A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN IRFZ34NPBF vs MTP36N06E
BUK455-60B NXP Semiconductors Check for Price TRANSISTOR 38 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power IRFZ34NPBF vs BUK455-60B
BUZ12A Siemens Check for Price Power Field-Effect Transistor, 42A I(D), 50V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, IRFZ34NPBF vs BUZ12A
BUZ11 Siemens Check for Price Power Field-Effect Transistor, 30A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, IRFZ34NPBF vs BUZ11
BUZ11S2 STMicroelectronics Check for Price 30A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN IRFZ34NPBF vs BUZ11S2
BUZ11S2 Siemens Check for Price Power Field-Effect Transistor, 30A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, IRFZ34NPBF vs BUZ11S2
BUZ11 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 30A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, IRFZ34NPBF vs BUZ11

IRFZ34NPBF Related Parts

IRFZ34NPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRFZ34NPBF is -55°C to 175°C.

  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.

  • The maximum gate-source voltage that can be applied to the IRFZ34NPBF is ±20V.

  • Yes, the IRFZ34NPBF is suitable for high-frequency switching applications up to 1 MHz. However, ensure that the device is properly cooled and the switching frequency is within the recommended range.

  • To protect the IRFZ34NPBF from ESD, handle the device by the body or use an anti-static wrist strap. Ensure that the workspace and equipment are also ESD-protected.

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