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Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
63J7120
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Newark | N Channel Mosfet, 55V, 29A To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:29A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRFZ34NPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 66300 |
|
$0.3540 / $0.4180 | Buy Now |
DISTI #
IRFZ34NPBF-ND
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DigiKey | MOSFET N-CH 55V 29A TO220AB Min Qty: 1 Lead time: 10 Weeks Container: Tube |
4278 In Stock |
|
$0.3455 / $0.9200 | Buy Now |
DISTI #
IRFZ34NPBF
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Avnet Americas | Trans MOSFET N-CH 55V 29A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFZ34NPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 100 Lead time: 10 Weeks, 0 Days Container: Tube | 0 |
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$0.3104 / $0.3793 | Buy Now |
DISTI #
63J7120
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Avnet Americas | Trans MOSFET N-CH 55V 29A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 63J7120) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 1 Days Container: Bulk | 9310 Partner Stock |
|
$0.4800 / $1.0100 | Buy Now |
DISTI #
942-IRFZ34NPBF
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Mouser Electronics | MOSFET MOSFT 55V 26A 40mOhm 22.7nC RoHS: Compliant | 6089 |
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$0.3450 / $0.8700 | Buy Now |
DISTI #
V36:1790_13892606
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Arrow Electronics | Trans MOSFET N-CH Si 55V 29A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2150 | Americas - 6631 |
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$0.3029 / $0.8282 | Buy Now |
DISTI #
V99:2348_13892606
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Arrow Electronics | Trans MOSFET N-CH Si 55V 29A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2222 | Americas - 1763 |
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$0.2948 / $0.3042 | Buy Now |
DISTI #
E02:0323_00010930
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Arrow Electronics | Trans MOSFET N-CH Si 55V 29A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2412 | Europe - 1188 |
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$0.2725 / $0.5624 | Buy Now |
DISTI #
70017051
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RS | MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.04Ohm, ID 29A, TO-220AB, PD 68W, VGS +/-20V | Infineon IRFZ34NPBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 8 |
|
$0.6200 / $0.8800 | Buy Now |
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Future Electronics | Single N-Channel 55 V 0.04 Ohm 34 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube | 21000Tube |
|
$0.3400 / $0.4100 | Buy Now |
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IRFZ34NPBF
Infineon Technologies AG
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Datasheet
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Compare Parts:
IRFZ34NPBF
Infineon Technologies AG
Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 17 Weeks, 1 Day | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 65 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 29 A | |
Drain-source On Resistance-Max | 0.04 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 68 W | |
Pulsed Drain Current-Max (IDM) | 100 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFZ34NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFZ34NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFZ34N | Power Field-Effect Transistor, 26A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Infineon Technologies AG | IRFZ34NPBF vs IRFZ34N |
AUIRFZ34N | Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 | International Rectifier | IRFZ34NPBF vs AUIRFZ34N |
IRFZ34N | Power Field-Effect Transistor, 26A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IRFZ34NPBF vs IRFZ34N |
IRFZ34NPBF | Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRFZ34NPBF vs IRFZ34NPBF |
AUIRFZ34N | Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 | Infineon Technologies AG | IRFZ34NPBF vs AUIRFZ34N |