Part Details for IRFZ34NSPBF by Infineon Technologies AG
Overview of IRFZ34NSPBF by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRFZ34NSPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
IRFZ34NSPBF-ND
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DigiKey | MOSFET N-CH 55V 29A D2PAK Lead time: 39 Weeks Container: Tube | Limited Supply - Call |
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Buy Now | |
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DISTI #
70017052
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RS | Power MOSFET, N-Ch, VDSS 55V, RDS(ON) 0.04Ohm, ID 29A, D2Pak, PD 68W, VGS+/-20V, Qg 34nC | Infineon IRFZ34NSPBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 0 |
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$1.1500 | RFQ |
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DISTI #
8650209
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element14 Asia-Pacific | MOSFET, N, 55V, 29A, D2-PAK RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$0.4279 / $0.9541 | Buy Now |
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DISTI #
8650209
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Farnell | MOSFET, N, 55V, 29A, D2-PAK RoHS: Compliant Min Qty: 1 Lead time: 18 Weeks, 1 Days Container: Each | 0 |
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$0.5586 / $1.4407 | Buy Now |
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Flip Electronics | Stock, ship today | 776 |
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$0.0930 | RFQ |
Part Details for IRFZ34NSPBF
IRFZ34NSPBF CAD Models
IRFZ34NSPBF Part Data Attributes
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IRFZ34NSPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFZ34NSPBF
Infineon Technologies AG
Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 130 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 29 A | |
| Drain-source On Resistance-Max | 0.04 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 68 W | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFZ34NSPBF
This table gives cross-reference parts and alternative options found for IRFZ34NSPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFZ34NSPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFZ34NSTRLPBF | Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRFZ34NSPBF vs IRFZ34NSTRLPBF |
| IRFZ34NSTRR | Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | IRFZ34NSPBF vs IRFZ34NSTRR |
| IRFZ34NSTRRPBF | Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRFZ34NSPBF vs IRFZ34NSTRRPBF |
| IRFZ34NS | Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRFZ34NSPBF vs IRFZ34NS |
| IRFZ34NSPBF | Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRFZ34NSPBF vs IRFZ34NSPBF |
| IRFZ34NSTRLPBF | Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRFZ34NSPBF vs IRFZ34NSTRLPBF |
| IRFZ34NSTRL | Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | IRFZ34NSPBF vs IRFZ34NSTRL |
| IRFZ34NS | Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | IRFZ34NSPBF vs IRFZ34NS |