Datasheets
IRFZ44NLPBF by:

Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN

Part Details for IRFZ44NLPBF by Infineon Technologies AG

Overview of IRFZ44NLPBF by Infineon Technologies AG

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Price & Stock for IRFZ44NLPBF

Part # Distributor Description Stock Price Buy
DISTI # 63J7130
Newark N Channel Mosfet, 55V, 49A, To-262, Channel Type:N Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:49A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRFZ44NLPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # 70018393
RS IRFZ44NLPBF N-channel MOSFET Transistor, 49 A, 55 V, 3-Pin TO-262 | Infineon IRFZ44NLPBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 0
  • 1 $1.0500
  • 10 $0.9900
  • 50 $0.9400
  • 100 $0.8900
$0.8900 / $1.0500 RFQ
Future Electronics Single N-Channel 55 V 17.5 mOhm 63 nC HEXFET® Power Mosfet - TO-262 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube 50
Tube
  • 1 $0.6150
  • 75 $0.5900
  • 250 $0.5650
  • 1,000 $0.5400
  • 3,000 $0.5000
$0.5000 / $0.6150 Buy Now
Rochester Electronics IRFZ44 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 6102
  • 1 $0.6775
  • 25 $0.6640
  • 100 $0.6369
  • 500 $0.6098
  • 1,000 $0.5759
$0.5759 / $0.6775 Buy Now
DISTI # IRFZ44NLPBF
TME Transistor: N-MOSFET, unipolar, 55V, 49A, 110W, TO262 Min Qty: 1 91
  • 1 $1.0800
  • 3 $0.9800
  • 10 $0.8700
  • 50 $0.7600
$0.7600 / $1.0800 Buy Now
Velocity Electronics Our Stock 700
RFQ
Chips Pulse Industry Limited TO262 Pre-ordered transistors RoHS Purchase Online, Ship Immediately 24
  • 30 $1.5403
  • 100 $1.3590
  • 500 $1.2771
  • 1,000 $1.2422
$1.2422 / $1.5403 Buy Now
DISTI # 1611336
element14 Asia-Pacific MOSFET, N RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $1.2329
  • 10 $1.0201
  • 100 $0.8293
  • 500 $0.7038
  • 1,000 $0.6590
$0.6590 / $1.2329 Buy Now
DISTI # 1611336
Farnell MOSFET, N RoHS: Compliant Min Qty: 1 Lead time: 51 Weeks, 1 Days Container: Each 0
  • 1 $1.2235
  • 25 $1.1336
  • 100 $1.0412
$1.0412 / $1.2235 Buy Now
LCSC 55V 49A 17.5m10V25A 94W 4V250uA 1PCSNChannel D2PAK(TO-262) MOSFETs ROHS 20
  • 1 $2.2232
  • 10 $1.9084
  • 30 $1.7114
  • 100 $1.5100
  • 500 $1.4190
  • 1,000 $1.3802
$1.3802 / $2.2232 Buy Now

Part Details for IRFZ44NLPBF

IRFZ44NLPBF CAD Models

IRFZ44NLPBF Part Data Attributes

IRFZ44NLPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRFZ44NLPBF Infineon Technologies AG Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 52 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 150 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 49 A
Drain-source On Resistance-Max 0.0175 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 94 W
Pulsed Drain Current-Max (IDM) 160 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFZ44NLPBF

This table gives cross-reference parts and alternative options found for IRFZ44NLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFZ44NLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFZ44NLPBF Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN International Rectifier IRFZ44NLPBF vs IRFZ44NLPBF
AUIRFZ44NL Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN Infineon Technologies AG IRFZ44NLPBF vs AUIRFZ44NL
AUIRFZ44NL Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN International Rectifier IRFZ44NLPBF vs AUIRFZ44NL
Part Number Description Manufacturer Compare
IRFZ44NSTRLPBF Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-2/3 Infineon Technologies AG IRFZ44NLPBF vs IRFZ44NSTRLPBF
IRFZ44NSTRR Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-2/3 International Rectifier IRFZ44NLPBF vs IRFZ44NSTRR
IRFZ44NSTRL Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-2/3 International Rectifier IRFZ44NLPBF vs IRFZ44NSTRL
AUIRFZ44NSTRL Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 International Rectifier IRFZ44NLPBF vs AUIRFZ44NSTRL
AUIRFZ44NS Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 International Rectifier IRFZ44NLPBF vs AUIRFZ44NS
IRFZ44NSTRLPBF Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-2/3 International Rectifier IRFZ44NLPBF vs IRFZ44NSTRLPBF
AUIRFZ44NSTRR Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 Infineon Technologies AG IRFZ44NLPBF vs AUIRFZ44NSTRR
AUIRFZ44NL Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN Infineon Technologies AG IRFZ44NLPBF vs AUIRFZ44NL
AUIRFZ44NS Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Infineon Technologies AG IRFZ44NLPBF vs AUIRFZ44NS
IRFZ44NS 49A, 55V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET NXP Semiconductors IRFZ44NLPBF vs IRFZ44NS

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