Datasheets
IRG4BC30KD-S by:

Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3

Part Details for IRG4BC30KD-S by International Rectifier

Overview of IRG4BC30KD-S by International Rectifier

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Price & Stock for IRG4BC30KD-S

Part # Distributor Description Stock Price Buy
Bristol Electronics   12
RFQ
Quest Components 28 A, 600 V, N-CHANNEL IGBT 7
  • 1 $3.9000
  • 4 $2.6000
$2.6000 / $3.9000 Buy Now

Part Details for IRG4BC30KD-S

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IRG4BC30KD-S Part Data Attributes:

IRG4BC30KD-S International Rectifier
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IRG4BC30KD-S International Rectifier Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 28 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 120 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 225
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 100 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 370 ns
Turn-on Time-Nom (ton) 100 ns

Alternate Parts for IRG4BC30KD-S

This table gives cross-reference parts and alternative options found for IRG4BC30KD-S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4BC30KD-S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRG4BC30KD-S Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 Infineon Technologies AG IRG4BC30KD-S vs IRG4BC30KD-S
IRG4BC30KD-STRRPBF Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRG4BC30KD-S vs IRG4BC30KD-STRRPBF
IRG4BC30KD-SPBF Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRG4BC30KD-S vs IRG4BC30KD-SPBF
IRG4BC30KD-STRLPBF Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRG4BC30KD-S vs IRG4BC30KD-STRLPBF
Part Number Description Manufacturer Compare
IRG4BC30KD-STRLPBF Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRG4BC30KD-S vs IRG4BC30KD-STRLPBF
IRG4BC30KD-S Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 Infineon Technologies AG IRG4BC30KD-S vs IRG4BC30KD-S
IRG4BC30KD-SPBF Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRG4BC30KD-S vs IRG4BC30KD-SPBF

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