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IRG7PH28UD1PBF by:

Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel

Part Details for IRG7PH28UD1PBF by International Rectifier

Overview of IRG7PH28UD1PBF by International Rectifier

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Applications Industrial Automation Energy and Power Systems Transportation and Logistics Renewable Energy Electronic Manufacturing Automotive

Price & Stock for IRG7PH28UD1PBF

Part # Distributor Description Stock Price Buy
DISTI # 2156-IRG7PH28UD1PBF-ND
DigiKey INSULATED GATE BIPOLAR GATE TRAS Min Qty: 137 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 7222
In Stock
  • 137 $2.1900
$2.1900 Buy Now
Rochester Electronics IRG7PH28 - Discrete IGBT with Anti-Parallel Diode ' RoHS: Compliant Status: Obsolete Min Qty: 1 7222
  • 1 $2.2200
  • 25 $2.1700
  • 100 $2.0800
  • 500 $2.0000
  • 1,000 $1.8800
$1.8800 / $2.2200 Buy Now
ComSIT USA INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWT APPLI Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant Europe - 500
RFQ

Part Details for IRG7PH28UD1PBF

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IRG7PH28UD1PBF Part Data Attributes:

IRG7PH28UD1PBF International Rectifier
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IRG7PH28UD1PBF International Rectifier Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Reach Compliance Code compliant
ECCN Code EAR99
Collector Current-Max (IC) 30 A
Collector-Emitter Voltage-Max 1200 V
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 30 V
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 115 W
Surface Mount NO

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