Part Details for IRG8CH50K10F by Infineon Technologies AG
Overview of IRG8CH50K10F by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRG8CH50K10F
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRG8CH50K10F
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Avnet Americas | Trans IGBT Chip N-CH 1200V 50A Die on Film/Wafer - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IRG8CH50K10F) RoHS: Compliant Min Qty: 968 Package Multiple: 1 Container: Waffle Pack | 0 |
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RFQ | |
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DISTI #
IRG8CH50K10F
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Avnet Americas | Trans IGBT Chip N-CH 1200V 50A Die on Film/Wafer - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IRG8CH50K10F) RoHS: Compliant Min Qty: 968 Package Multiple: 1 Container: Waffle Pack | 0 |
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RFQ |
Part Details for IRG8CH50K10F
IRG8CH50K10F CAD Models
IRG8CH50K10F Part Data Attributes:
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IRG8CH50K10F
Infineon Technologies AG
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Datasheet
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IRG8CH50K10F
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Collector Current-Max (IC) | 50 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Gate-Emitter Thr Voltage-Max | 6.5 V | |
| Gate-Emitter Voltage-Max | 30 V | |
| Operating Temperature-Max | 175 °C | |
| Polarity/Channel Type | N-CHANNEL |