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Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
25M9864
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Newark | Igbt, 600V, 48A, 175Deg C, 250W, Continuous Collector Current:48A, Collector Emitter Saturation Voltage:1.65V, Power Dissipation:250W, Collector Emitter Voltage Max:600V, No. Of Pins:3Pins, Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon IRGB4062DPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
DISTI #
IRGB4062DPBF
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Avnet Americas | Trans IGBT Chip N-CH 600V 48A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRGB4062DPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 50 Container: Tube | 0 |
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RFQ | |
DISTI #
IRGB4062DPBF
|
Avnet Americas | Trans IGBT Chip N-CH 600V 48A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRGB4062DPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 50 Container: Tube | 0 |
|
RFQ |
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IRGB4062DPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRGB4062DPBF
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | LEAD FREE PACKAGE-3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 48 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 41 ns | |
Gate-Emitter Thr Voltage-Max | 6.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 250 W | |
Qualification Status | Not Qualified | |
Rise Time-Max (tr) | 31 ns | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 164 ns | |
Turn-on Time-Nom (ton) | 64 ns |
This table gives cross-reference parts and alternative options found for IRGB4062DPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRGB4062DPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRGB4062D | Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-220AB, | Infineon Technologies AG | IRGB4062DPBF vs IRGB4062D |
IRGB4062DPBF | Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRGB4062DPBF vs IRGB4062DPBF |