Datasheets
IRGP4068D-EPBF by:

Insulated Gate Bipolar Transistor, 96A I(C), 600V V(BR)CES, N-Channel, TO-247AD, LEAD FREE PACKAGE-3

Part Details for IRGP4068D-EPBF by Infineon Technologies AG

Overview of IRGP4068D-EPBF by Infineon Technologies AG

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Applications Industrial Automation Energy and Power Systems Transportation and Logistics Renewable Energy Electronic Manufacturing Automotive

Price & Stock for IRGP4068D-EPBF

Part # Distributor Description Stock Price Buy
DISTI # 28M6156
Newark Igbt, 1.65V, 96A, To-247Ad-3, Continuous Collector Current:96A, Collector Emitter Saturation Voltage:1.65V, Power Dissipation:330W, Collector Emitter Voltage Max:600V, No. Of Pins:3Pins, Operating Temperature Max:175°C, Msl:- Rohs Compliant: Yes |Infineon IRGP4068D-EPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
Rochester Electronics IRGP4068 - Discrete IGBT with Anti-Parallel Diode RoHS: Compliant Status: Obsolete Min Qty: 1 372
  • 1 $4.4900
  • 25 $4.4000
  • 100 $4.2200
  • 500 $4.0400
  • 1,000 $3.8200
$3.8200 / $4.4900 Buy Now
DISTI # 2148096
element14 Asia-Pacific IGBT, SWITCHING, 600V, TO-247 RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $6.9793
  • 10 $5.8491
  • 100 $4.6675
  • 500 $4.3667
  • 1,000 $4.0070
$4.0070 / $6.9793 Buy Now
DISTI # 2148096
Farnell IGBT, SWITCHING, 600V, TO-247 RoHS: Compliant Min Qty: 1 Lead time: 51 Weeks, 1 Days Container: Each 0
  • 1 $6.2050
  • 5 $6.1052
  • 10 $5.9928
$5.9928 / $6.2050 Buy Now

Part Details for IRGP4068D-EPBF

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IRGP4068D-EPBF Part Data Attributes

IRGP4068D-EPBF Infineon Technologies AG
Buy Now Datasheet
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IRGP4068D-EPBF Infineon Technologies AG Insulated Gate Bipolar Transistor, 96A I(C), 600V V(BR)CES, N-Channel, TO-247AD, LEAD FREE PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description LEAD FREE PACKAGE-3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection COLLECTOR
Collector Current-Max (IC) 96 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 330 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 210 ns
Turn-on Time-Nom (ton) 180 ns

Alternate Parts for IRGP4068D-EPBF

This table gives cross-reference parts and alternative options found for IRGP4068D-EPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRGP4068D-EPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRGP4068DPBF Insulated Gate Bipolar Transistor, 96A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3 Infineon Technologies AG IRGP4068D-EPBF vs IRGP4068DPBF

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