Part Details for IRGP50B60PD1-EP by International Rectifier
Overview of IRGP50B60PD1-EP by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
Part Details for IRGP50B60PD1-EP
IRGP50B60PD1-EP CAD Models
IRGP50B60PD1-EP Part Data Attributes
|
|
IRGP50B60PD1-EP
International Rectifier
Buy Now
Datasheet
|
Compare Parts:
IRGP50B60PD1-EP
International Rectifier
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, LEAD FREE PACKAGE-3
|
| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-247AD | |
| Package Description | LEAD FREE PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH RELIABILITY | |
| Collector Current-Max (IC) | 75 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 20 ns | |
| Gate-Emitter Thr Voltage-Max | 5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 390 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 20 ns | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 161 ns | |
| Turn-on Time-Nom (ton) | 39 ns |
Alternate Parts for IRGP50B60PD1-EP
This table gives cross-reference parts and alternative options found for IRGP50B60PD1-EP. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRGP50B60PD1-EP, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRGP50B60PD1PBF | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3 | International Rectifier | IRGP50B60PD1-EP vs IRGP50B60PD1PBF |
| IRGP50B60PD1-EP | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, LEAD FREE PACKAGE-3 | Infineon Technologies AG | IRGP50B60PD1-EP vs IRGP50B60PD1-EP |
| AUIRGP50B60PD1-E | Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT PACKAGE-3 | Infineon Technologies AG | IRGP50B60PD1-EP vs AUIRGP50B60PD1-E |
| IRGP50B60PD1-E | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | International Rectifier | IRGP50B60PD1-EP vs IRGP50B60PD1-E |
| AUIRGP50B60PD1 | Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC, ROHS COMPLIANT PACKAGE-3 | Infineon Technologies AG | IRGP50B60PD1-EP vs AUIRGP50B60PD1 |
| IRGP50B60PD1PBF | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3 | Infineon Technologies AG | IRGP50B60PD1-EP vs IRGP50B60PD1PBF |