Part Details for IRGTI200F06 by International Rectifier
Results Overview of IRGTI200F06 by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRGTI200F06 Information
IRGTI200F06 by International Rectifier is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRGTI200F06
IRGTI200F06 CAD Models
IRGTI200F06 Part Data Attributes
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IRGTI200F06
International Rectifier
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Datasheet
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IRGTI200F06
International Rectifier
Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel,
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | FLANGE MOUNT, R-MUFM-X7 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | FAST | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 200 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 5.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-MUFM-X7 | |
| Number of Elements | 2 | |
| Number of Terminals | 7 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 500 W | |
| Power Dissipation-Max (Abs) | 500 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 2.3 V |
Alternate Parts for IRGTI200F06
This table gives cross-reference parts and alternative options found for IRGTI200F06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRGTI200F06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRGTDN200K06 | International Rectifier | Check for Price | Insulated Gate Bipolar Transistor, 260A I(C), 600V V(BR)CES, N-Channel, | IRGTI200F06 vs IRGTDN200K06 |
| IRGTI115U06 | International Rectifier | Check for Price | Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel, | IRGTI200F06 vs IRGTI115U06 |
| IRGTDN200M06 | International Rectifier | Check for Price | Insulated Gate Bipolar Transistor, 260A I(C), 600V V(BR)CES, N-Channel, | IRGTI200F06 vs IRGTDN200M06 |
| MBM300GS12A | Renesas Electronics Corporation | Check for Price | 300A, 1200V, N-CHANNEL IGBT, MODULE | IRGTI200F06 vs MBM300GS12A |
| IRGTIN100M06 | International Rectifier | Check for Price | Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, | IRGTI200F06 vs IRGTIN100M06 |
| IRGTDN300K06 | International Rectifier | Check for Price | Insulated Gate Bipolar Transistor, 340A I(C), 600V V(BR)CES, N-Channel, | IRGTI200F06 vs IRGTDN300K06 |
| MBM300GS12A | Hitachi Ltd | Check for Price | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE | IRGTI200F06 vs MBM300GS12A |