There are no models available for this part yet.
Overview of IRHE3110 by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for IRHE3110 by Infineon Technologies AG
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
IRHE3110
|
Avnet Americas | Transistor MOSFET N-Channel 100V 3.5A 18-Pin LCC - Bulk (Alt: IRHE3110) Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
|
RFQ |
CAD Models for IRHE3110 by Infineon Technologies AG
Part Data Attributes for IRHE3110 by Infineon Technologies AG
|
|
|
|---|---|
|
Rohs Code
|
No
|
|
Part Life Cycle Code
|
Active
|
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
|
Package Description
|
CHIP CARRIER, R-CQCC-N18
|
|
Reach Compliance Code
|
not_compliant
|
|
ECCN Code
|
EAR99
|
|
Additional Feature
|
HIGH RELIABILITY
|
|
Avalanche Energy Rating (Eas)
|
68 mJ
|
|
Case Connection
|
SOURCE
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
100 V
|
|
Drain Current-Max (ID)
|
3.5 A
|
|
Drain-source On Resistance-Max
|
0.69 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JESD-30 Code
|
R-CQCC-N18
|
|
JESD-609 Code
|
e0
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
18
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Package Body Material
|
CERAMIC, METAL-SEALED COFIRED
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
CHIP CARRIER
|
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
15 W
|
|
Pulsed Drain Current-Max (IDM)
|
14 A
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
YES
|
|
Terminal Finish
|
Tin/Lead (Sn/Pb)
|
|
Terminal Form
|
NO LEAD
|
|
Terminal Position
|
QUAD
|
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|