Part Details for IRHE9230 by Infineon Technologies AG
Overview of IRHE9230 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRHE9230
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRHE9230
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Avnet Americas | Transistor MOSFET P-Channel 200V 4A 18-Pin LCC - Bulk (Alt: IRHE9230) Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
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RFQ | |
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DISTI #
IRHE9230
|
Avnet Americas | Transistor MOSFET P-Channel 200V 4A 18-Pin LCC - Bulk (Alt: IRHE9230) Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
|
RFQ | |
|
DISTI #
IRHE9230
|
Avnet Americas | Transistor MOSFET P-Channel 200V 4A 18-Pin LCC - Bulk (Alt: IRHE9230) Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
|
RFQ |
Part Details for IRHE9230
IRHE9230 CAD Models
IRHE9230 Part Data Attributes
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IRHE9230
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRHE9230
Infineon Technologies AG
Power Field-Effect Transistor, 4A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-18
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | CHIP CARRIER, R-CQCC-N15 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | RADIATION HARDENED | |
| Avalanche Energy Rating (Eas) | 171 mJ | |
| Case Connection | SOURCE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 0.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-CQCC-N15 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 15 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 25 W | |
| Pulsed Drain Current-Max (IDM) | 16 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | NO LEAD | |
| Terminal Position | QUAD | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRHE9230
This table gives cross-reference parts and alternative options found for IRHE9230. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRHE9230, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRHE9230PBF | Power Field-Effect Transistor, 4A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-18 | International Rectifier | IRHE9230 vs IRHE9230PBF |
| JANSF2N7390U | Power Field-Effect Transistor, 4A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-18 | Infineon Technologies AG | IRHE9230 vs JANSF2N7390U |
| IRHE9230 | Power Field-Effect Transistor, 4A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-18 | International Rectifier | IRHE9230 vs IRHE9230 |