Part Details for IRHLNMC7S7214 by Infineon Technologies AG
Overview of IRHLNMC7S7214 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRHLNMC7S7214
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRHLNMC7S7214
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Avnet Americas | Transistor MOSFET N-Channel 250V 3.2A 3-Pin SMD-0.2 - Bulk (Alt: IRHLNMC7S7214) Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
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RFQ |
Part Details for IRHLNMC7S7214
IRHLNMC7S7214 CAD Models
IRHLNMC7S7214 Part Data Attributes
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IRHLNMC7S7214
Infineon Technologies AG
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Datasheet
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Compare Parts:
IRHLNMC7S7214
Infineon Technologies AG
Power Field-Effect Transistor,
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | CHIP CARRIER, R-CBCC-N3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 17.6 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 250 V | |
| Drain Current-Max (ID) | 3.2 A | |
| Drain-source On Resistance-Max | 1.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-CBCC-N3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 23.2 W | |
| Pulsed Drain Current-Max (IDM) | 12.8 A | |
| Reference Standard | RH - 100K Rad(Si) | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 67 ns | |
| Turn-on Time-Max (ton) | 52 ns |
Alternate Parts for IRHLNMC7S7214
This table gives cross-reference parts and alternative options found for IRHLNMC7S7214. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRHLNMC7S7214, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRHLNM7S7214SCS | Power Field-Effect Transistor, | Infineon Technologies AG | IRHLNMC7S7214 vs IRHLNM7S7214SCS |
| IRHLNM7S3214 | Power Field-Effect Transistor, | Infineon Technologies AG | IRHLNMC7S7214 vs IRHLNM7S3214 |
| IRHLNM7S7214 | Power Field-Effect Transistor, | Infineon Technologies AG | IRHLNMC7S7214 vs IRHLNM7S7214 |