Part Details for IRHM57160 by International Rectifier
Overview of IRHM57160 by International Rectifier
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRHM57160
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 35 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA | 5 |
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$487.5000 / $562.5000 | Buy Now |
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Quest Components | 35 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA | 1 |
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$981.6800 | Buy Now |
Part Details for IRHM57160
IRHM57160 CAD Models
IRHM57160 Part Data Attributes
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IRHM57160
International Rectifier
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Datasheet
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IRHM57160
International Rectifier
Power Field-Effect Transistor, 35A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-254AA | |
| Package Description | FLANGE MOUNT, S-CSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 500 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 35 A | |
| Drain-source On Resistance-Max | 0.018 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-254AA | |
| JESD-30 Code | S-CSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | SQUARE | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 250 W | |
| Pulsed Drain Current-Max (IDM) | 140 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRHM57160
This table gives cross-reference parts and alternative options found for IRHM57160. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRHM57160, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRHM57160PBF | Power Field-Effect Transistor, 35A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3 | International Rectifier | IRHM57160 vs IRHM57160PBF |
| IRHM57160 | Power Field-Effect Transistor, 35A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3 | Infineon Technologies AG | IRHM57160 vs IRHM57160 |