There are no models available for this part yet.
Overview of IRHNS63164 by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 2 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Renewable Energy
Price & Stock for IRHNS63164 by Infineon Technologies AG
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
IRHNS63164
|
Avnet Americas | Transistor MOSFET N-Channel 150V 56A 3-Pin SupIR-SMD - Bulk (Alt: IRHNS63164) Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
|
RFQ |
CAD Models for IRHNS63164 by Infineon Technologies AG
Part Data Attributes for IRHNS63164 by Infineon Technologies AG
|
|
---|---|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Samacsys Manufacturer
|
Infineon
|
Additional Feature
|
HIGH RELIABILITY
|
Avalanche Energy Rating (Eas)
|
283 mJ
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
150 V
|
Drain Current-Max (ID)
|
49 A
|
Drain-source On Resistance-Max
|
0.018 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss)
|
28 pF
|
JESD-30 Code
|
S-CSSO-G2
|
Number of Elements
|
1
|
Number of Terminals
|
2
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Operating Temperature-Min
|
-55 °C
|
Package Body Material
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape
|
SQUARE
|
Package Style
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
250 W
|
Pulsed Drain Current-Max (IDM)
|
224 A
|
Reference Standard
|
RH - 300K Rad(Si)
|
Surface Mount
|
YES
|
Terminal Form
|
GULL WING
|
Terminal Position
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Turn-off Time-Max (toff)
|
120 ns
|
Turn-on Time-Max (ton)
|
205 ns
|
Alternate Parts for IRHNS63164
This table gives cross-reference parts and alternative options found for IRHNS63164. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRHNS63164, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
JANSF2N7581U2A | Power Field-Effect Transistor, | Infineon Technologies AG | IRHNS63164 vs JANSF2N7581U2A |
JANSR2N7581U2A | Power Field-Effect Transistor, | Infineon Technologies AG | IRHNS63164 vs JANSR2N7581U2A |