Part Details for IRHY57Z30CM by Infineon Technologies AG
Overview of IRHY57Z30CM by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRHY57Z30CM
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
IRHY57Z30CM
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Avnet Americas | Transistor MOSFET N-Channel 30V 18A 3-Pin TO-257AA - Bulk (Alt: IRHY57Z30CM) Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
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RFQ | |
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DISTI #
IRHY57Z30CM
|
Avnet Americas | Transistor MOSFET N-Channel 30V 18A 3-Pin TO-257AA - Bulk (Alt: IRHY57Z30CM) Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
|
RFQ | |
|
DISTI #
IRHY57Z30CM
|
Avnet Americas | Transistor MOSFET N-Channel 30V 18A 3-Pin TO-257AA - Bulk (Alt: IRHY57Z30CM) Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
|
RFQ |
Part Details for IRHY57Z30CM
IRHY57Z30CM CAD Models
IRHY57Z30CM Part Data Attributes
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IRHY57Z30CM
Infineon Technologies AG
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Datasheet
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IRHY57Z30CM
Infineon Technologies AG
Power Field-Effect Transistor, 18A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, CERAMIC PACKAGE-3
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | FLANGE MOUNT, S-CSFM-P3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 177 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.03 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-257AA | |
| JESD-30 Code | S-CSFM-P3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | SQUARE | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | PIN/PEG | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRHY57Z30CM
This table gives cross-reference parts and alternative options found for IRHY57Z30CM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRHY57Z30CM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRHY57Z30CMPBF | Power Field-Effect Transistor, 18A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, CERAMIC PACKAGE-3 | International Rectifier | IRHY57Z30CM vs IRHY57Z30CMPBF |