Datasheets
IRL2203N by:

Power Field-Effect Transistor, 116A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

Part Details for IRL2203N by International Rectifier

Results Overview of IRL2203N by International Rectifier

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IRL2203N Information

IRL2203N by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRL2203N

Part # Distributor Description Stock Price Buy
Bristol Electronics   218
RFQ
Bristol Electronics   98
RFQ
ComSIT USA HEXFET POWER MOSFET Power Field-Effect Transistor, 116A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant Stock DE - 3450
Stock ES - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 6
  • 1 $3.0800
  • 100 $2.3100
  • 1,000 $2.0000
$2.0000 / $3.0800 Buy Now
Win Source Electronics Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A⑦) 23022
  • 60 $0.8480
  • 145 $0.6960
  • 225 $0.6740
  • 310 $0.6530
  • 400 $0.6310
  • 535 $0.5660
$0.5660 / $0.8480 Buy Now

Part Details for IRL2203N

IRL2203N CAD Models

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IRL2203N Part Data Attributes

IRL2203N International Rectifier
Buy Now Datasheet
Compare Parts:
IRL2203N International Rectifier Power Field-Effect Transistor, 116A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC
Part Package Code TO-220AB
Package Description TO-220AB, 3 PIN
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 290 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 116 A
Drain-source On Resistance-Max 0.007 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 130 W
Power Dissipation-Max (Abs) 130 W
Pulsed Drain Current-Max (IDM) 400 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRL2203N

This table gives cross-reference parts and alternative options found for IRL2203N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRL2203N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
AUIRL2203N Infineon Technologies AG Check for Price Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, IRL2203N vs AUIRL2203N
IRL2203NPBF International Rectifier Check for Price Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 IRL2203N vs IRL2203NPBF

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