Part Details for IRL2203NSTRLPBF by Infineon Technologies AG
Overview of IRL2203NSTRLPBF by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (5 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRL2203NSTRLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 154 |
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RFQ | ||
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DISTI #
IRL2203NSTRLPBF
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TME | Transistor: N-MOSFET, unipolar, 30V, 116A, 170W, D2PAK Min Qty: 800 | 0 |
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$0.6700 | RFQ |
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Chip1Cloud | MOSFET N-CH 30V 116A D2PAK | 2870 |
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RFQ | |
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DISTI #
2725997
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element14 Asia-Pacific | RoHS: Compliant Min Qty: 1 Container: Cut Tape | 0 |
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$1.8971 | Buy Now |
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DISTI #
2725997RL
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Farnell | MOSFET, N-CH, 30V, 116A, TO-263AB RoHS: Compliant Min Qty: 10 Lead time: 16 Weeks, 1 Days Container: Reel | 0 |
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$0.5562 / $0.7328 | Buy Now |
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DISTI #
2725997
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Farnell | MOSFET, N-CH, 30V, 116A, TO-263AB RoHS: Compliant Min Qty: 1 Lead time: 16 Weeks, 1 Days Container: Cut Tape | 0 |
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$0.5562 / $0.9708 | Buy Now |
Part Details for IRL2203NSTRLPBF
IRL2203NSTRLPBF CAD Models
IRL2203NSTRLPBF Part Data Attributes:
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IRL2203NSTRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRL2203NSTRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Date Of Intro | 1996-11-01 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 290 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.007 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 180 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRL2203NSTRLPBF
This table gives cross-reference parts and alternative options found for IRL2203NSTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRL2203NSTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRL2203NSTRR | Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | IRL2203NSTRLPBF vs IRL2203NSTRR |
| IRL2203NS | Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRL2203NSTRLPBF vs IRL2203NS |
| IRL2203NS | Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | IRL2203NSTRLPBF vs IRL2203NS |
| IRL2203NSTRRPBF | Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRL2203NSTRLPBF vs IRL2203NSTRRPBF |
| IRL2203NSTRLPBF | Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRL2203NSTRLPBF vs IRL2203NSTRLPBF |