Datasheets
IRL3803VSPBF by:

Power Field-Effect Transistor, 75A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

Part Details for IRL3803VSPBF by Infineon Technologies AG

Overview of IRL3803VSPBF by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRL3803VSPBF

Part # Distributor Description Stock Price Buy
DISTI # 70018547
RS MOSFET, 30V, 140A, 5.5 MOHM, 50.7 NC QG, LOGIC LEVEL, D2-PAK | Infineon IRL3803VSPBF RoHS: Not Compliant Min Qty: 450 Package Multiple: 1 Container: Bulk 0
  • 450 $2.6300
  • 2,250 $2.4900
  • 4,500 $2.3600
  • 45,000 $2.2300
  • 112,500 $2.1000
$2.1000 / $2.6300 RFQ
Bristol Electronics   50
RFQ

Part Details for IRL3803VSPBF

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IRL3803VSPBF Part Data Attributes

IRL3803VSPBF Infineon Technologies AG
Buy Now Datasheet
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IRL3803VSPBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 400 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.0055 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 200 W
Pulsed Drain Current-Max (IDM) 470 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRL3803VSPBF

This table gives cross-reference parts and alternative options found for IRL3803VSPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRL3803VSPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRL3803VSTRR Power Field-Effect Transistor, 75A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 International Rectifier IRL3803VSPBF vs IRL3803VSTRR
IRL3803VSTRRPBF Power Field-Effect Transistor, 75A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRL3803VSPBF vs IRL3803VSTRRPBF
IRL3803VS Power Field-Effect Transistor, 140A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 International Rectifier IRL3803VSPBF vs IRL3803VS
IRL3803VSTRRPBF Power Field-Effect Transistor, 75A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRL3803VSPBF vs IRL3803VSTRRPBF
IRL3803VSTRL Power Field-Effect Transistor, 75A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 International Rectifier IRL3803VSPBF vs IRL3803VSTRL
IRL3803VSPBF Power Field-Effect Transistor, 75A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRL3803VSPBF vs IRL3803VSPBF
IRL3803VSTRLPBF Power Field-Effect Transistor, 75A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRL3803VSPBF vs IRL3803VSTRLPBF
Part Number Description Manufacturer Compare
IRL3803VSTRL Power Field-Effect Transistor, 75A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 International Rectifier IRL3803VSPBF vs IRL3803VSTRL
IRL3803VSPBF Power Field-Effect Transistor, 75A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRL3803VSPBF vs IRL3803VSPBF
IRL3803VSTRR Power Field-Effect Transistor, 75A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 International Rectifier IRL3803VSPBF vs IRL3803VSTRR
IRL3803VSTRRPBF Power Field-Effect Transistor, 75A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRL3803VSPBF vs IRL3803VSTRRPBF
IRL3803VS Power Field-Effect Transistor, 140A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 International Rectifier IRL3803VSPBF vs IRL3803VS
IRL3803VSTRLPBF Power Field-Effect Transistor, 75A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRL3803VSPBF vs IRL3803VSTRLPBF
IRL3803VSTRRPBF Power Field-Effect Transistor, 75A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRL3803VSPBF vs IRL3803VSTRRPBF

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