Datasheets
IRL510 by:

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Details for IRL510 by Vishay Siliconix

Overview of IRL510 by Vishay Siliconix

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Price & Stock for IRL510

Part # Distributor Description Stock Price Buy
Quest Components 5.6 A, 100 V, 0.54 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB 228
  • 1 $4.2918
  • 25 $2.8612
  • 88 $2.6466
$2.6466 / $4.2918 Buy Now

Part Details for IRL510

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IRL510 Part Data Attributes

IRL510 Vishay Siliconix
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IRL510 Vishay Siliconix Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer VISHAY SILICONIX
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 100 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 5.6 A
Drain-source On Resistance-Max 0.54 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 18 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRL510

This table gives cross-reference parts and alternative options found for IRL510. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRL510, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRL510 Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Vishay Intertechnologies IRL510 vs IRL510
IRL510PBF Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies IRL510 vs IRL510PBF
Part Number Description Manufacturer Compare
2SK1260 Power Field-Effect Transistor, 5A I(D), 100V, 0.47ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, TO-220F, 3 PIN Panasonic Electronic Components IRL510 vs 2SK1260
FS5KMJ-2 Power Field-Effect Transistor, 5A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220FN, 3 PIN Powerex Power Semiconductors IRL510 vs FS5KMJ-2
NDP410BL 7A, 100V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN Texas Instruments IRL510 vs NDP410BL
2SK1737 Power Field-Effect Transistor, 1.8A I(D), 100V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET SANYO Electric Co Ltd IRL510 vs 2SK1737
RFP10N12L Power Field-Effect Transistor, 10A I(D), 120V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRL510 vs RFP10N12L
BUK552-100B TRANSISTOR 8.5 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power NXP Semiconductors IRL510 vs BUK552-100B
BUK552-100A TRANSISTOR 10 A, 100 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power NXP Semiconductors IRL510 vs BUK552-100A
FS5UMJ-2 Power Field-Effect Transistor, 5A I(D), 100V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Mitsubishi Electric IRL510 vs FS5UMJ-2
RFP10N12L 10A, 120V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRL510 vs RFP10N12L
2SK2581 Power Field-Effect Transistor, 5A I(D), 100V, 0.47ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220E, 3 PIN Panasonic Electronic Components IRL510 vs 2SK2581

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