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Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
97K2386
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Newark | Mosfet, N, To-220, Transistor Polarity:N Channel, Continuous Drain Current Id:10A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.18Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2V, Power Dissipation Pd:48W, Rohs Compliant: Yes |Infineon IRL520NPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 7309 |
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$0.4450 / $0.9870 | Buy Now |
DISTI #
IRL520NPBF-ND
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DigiKey | MOSFET N-CH 100V 10A TO220AB Min Qty: 1 Lead time: 10 Weeks Container: Tube |
8686 In Stock |
|
$0.3925 / $1.0000 | Buy Now |
DISTI #
IRL520NPBF
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Avnet Americas | Trans MOSFET N-CH 100V 10A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRL520NPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 100 Lead time: 10 Weeks, 0 Days Container: Tube | 0 |
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$0.3363 / $0.4110 | Buy Now |
DISTI #
942-IRL520NPBF
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Mouser Electronics | MOSFET MOSFT 10A 13.3nC 180mOhm LogLvAB RoHS: Compliant | 3445 |
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$0.3850 / $0.9100 | Buy Now |
DISTI #
70017091
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RS | MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 0.18Ohm, ID 10A, TO-220AB, PD 48W, VGS +/-16V | Infineon IRL520NPBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 10 |
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$0.6300 / $0.8900 | Buy Now |
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Future Electronics | Single N-Channel 100 V 0.22 Ohm 20 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 50 Container: Tube | 0Tube |
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$0.3800 / $0.4600 | Buy Now |
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Future Electronics | Single N-Channel 100 V 0.22 Ohm 20 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 50 Container: Tube | 0Tube |
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$0.3800 / $0.4550 | Buy Now |
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Rochester Electronics | IRL520N - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 67 |
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$0.3705 / $0.4359 | Buy Now |
DISTI #
IRL520NPBF
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Avnet Americas | Trans MOSFET N-CH 100V 10A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRL520NPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 100 Lead time: 10 Weeks, 0 Days Container: Tube | 0 |
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$0.3363 / $0.4110 | Buy Now |
DISTI #
IRL520NPBF
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TME | Transistor: N-MOSFET, unipolar, 100V, 10A, 48W, TO220AB Min Qty: 1 | 140 |
|
$0.4060 / $0.8590 | Buy Now |
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IRL520NPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRL520NPBF
Infineon Technologies AG
Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 10 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 85 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 0.22 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 48 W | |
Pulsed Drain Current-Max (IDM) | 35 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRL520NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRL520NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRL520N | Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IRL520NPBF vs IRL520N |
IRL520NPBF | Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRL520NPBF vs IRL520NPBF |