Part Details for IRL520NSPBF by Infineon Technologies AG
Overview of IRL520NSPBF by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRL520NSPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRL520NSPBF-ND
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DigiKey | MOSFET N-CH 100V 10A D2PAK Lead time: 39 Weeks Container: Tube | Limited Supply - Call |
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Buy Now | |
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DISTI #
70017092
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RS | MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 0.18Ohm, ID 10A, D2Pak, PD 48W, VGS +/-16V,-55C | Infineon IRL520NSPBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 0 |
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$1.1100 | RFQ |
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Bristol Electronics | 22 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-263AB | 17 |
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$1.4250 / $2.2800 | Buy Now |
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DISTI #
8651051
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element14 Asia-Pacific | MOSFET, N, 100V, 10A, D2-PAK RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$0.4165 / $0.9255 | Buy Now |
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DISTI #
8651051
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Farnell | MOSFET, N, 100V, 10A, D2-PAK RoHS: Compliant Min Qty: 5 Lead time: 18 Weeks, 1 Days Container: Each | 0 |
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$0.3926 / $0.9369 | Buy Now |
Part Details for IRL520NSPBF
IRL520NSPBF CAD Models
IRL520NSPBF Part Data Attributes
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IRL520NSPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRL520NSPBF
Infineon Technologies AG
Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | D2PAK-3/2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 85 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.22 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 50 pF | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 3.8 W | |
| Power Dissipation-Max (Abs) | 48 W | |
| Pulsed Drain Current-Max (IDM) | 35 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRL520NSPBF
This table gives cross-reference parts and alternative options found for IRL520NSPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRL520NSPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF520NS | Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRL520NSPBF vs IRF520NS |
| IRF520NSTRRPBF | Power Field-Effect Transistor, | Infineon Technologies AG | IRL520NSPBF vs IRF520NSTRRPBF |
| IRL520NSTRLPBF | Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRL520NSPBF vs IRL520NSTRLPBF |
| IRF520NSTRL | Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | International Rectifier | IRL520NSPBF vs IRF520NSTRL |
| IRF520NSTRLPBF | Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRL520NSPBF vs IRF520NSTRLPBF |
| IRF520NS | Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | International Rectifier | IRL520NSPBF vs IRF520NS |
| IRL520NSTRR | Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | International Rectifier | IRL520NSPBF vs IRL520NSTRR |
| IRF520NSPBF | Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRL520NSPBF vs IRF520NSPBF |
| IRF520NSTRLPBF | Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRL520NSPBF vs IRF520NSTRLPBF |
| IRL520NS | Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRL520NSPBF vs IRL520NS |