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Part Details for IRL520NSTRLPBF by Infineon Technologies AG
Overview of IRL520NSTRLPBF by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRL520NSTRLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
34AC1800
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Newark | Mosfet, N-Ch, 100V, 10A, To-263Ab, Transistor Polarity:N Channel, Continuous Drain Current Id:10A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.18Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2V, Power Rohs Compliant: Yes |Infineon IRL520NSTRLPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 10150 |
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$0.5380 / $1.2200 | Buy Now |
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DISTI #
448-IRL520NSTRLPBFCT-ND
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DigiKey | MOSFET N-CH 100V 10A D2PAK Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1759 In Stock |
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$0.4501 / $1.2000 | Buy Now |
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DISTI #
IRL520NSTRLPBF
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Avnet Americas | Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRL520NSTRLPBF) RoHS: Compliant Min Qty: 1600 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.4043 / $0.4942 | Buy Now |
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DISTI #
942-IRL520NSTRLPBF
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Mouser Electronics | MOSFET MOSFT 100V 10A 180mOhm 13.3nC LogLv RoHS: Compliant | 37843 |
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$0.4600 / $1.1800 | Buy Now |
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Future Electronics | Single N-Channel 100 V 0.26 Ohm 20 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 800Reel |
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$0.2350 / $0.2550 | Buy Now |
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Future Electronics | Single N-Channel 100 V 0.26 Ohm 20 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Cut Tape/Mini-Reel | 88Cut Tape/Mini-Reel |
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$0.8100 / $1.1100 | Buy Now |
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Future Electronics | Single N-Channel 100 V 0.26 Ohm 20 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$0.4400 / $0.4850 | Buy Now |
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Rochester Electronics | IRL520NSTRLPBF - PLANAR >= 100V RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 3200 |
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$0.4455 / $0.5241 | Buy Now |
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DISTI #
IRL520NSTRLPBF
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Avnet Americas | Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRL520NSTRLPBF) RoHS: Compliant Min Qty: 1600 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.4043 / $0.4942 | Buy Now |
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Ameya Holding Limited | Min Qty: 15 | 440 |
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$1.0287 / $1.0934 | Buy Now |
Part Details for IRL520NSTRLPBF
IRL520NSTRLPBF CAD Models
IRL520NSTRLPBF Part Data Attributes
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IRL520NSTRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRL520NSTRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 85 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.22 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 50 pF | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 3.8 W | |
| Power Dissipation-Max (Abs) | 48 W | |
| Pulsed Drain Current-Max (IDM) | 35 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRL520NSTRLPBF
This table gives cross-reference parts and alternative options found for IRL520NSTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRL520NSTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF520NS | Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRL520NSTRLPBF vs IRF520NS |
| IRF520NSTRRPBF | Power Field-Effect Transistor, | Infineon Technologies AG | IRL520NSTRLPBF vs IRF520NSTRRPBF |
| IRL520NSPBF | Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRL520NSTRLPBF vs IRL520NSPBF |
| IRF520NSTRL | Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | International Rectifier | IRL520NSTRLPBF vs IRF520NSTRL |
| IRF520NSTRLPBF | Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRL520NSTRLPBF vs IRF520NSTRLPBF |
| IRF520NS | Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | International Rectifier | IRL520NSTRLPBF vs IRF520NS |
| IRL520NSTRR | Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | International Rectifier | IRL520NSTRLPBF vs IRL520NSTRR |
| IRF520NSPBF | Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRL520NSTRLPBF vs IRF520NSPBF |
| IRF520NSTRLPBF | Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRL520NSTRLPBF vs IRF520NSTRLPBF |
| IRL520NS | Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRL520NSTRLPBF vs IRL520NS |