IRL8113PBF
Description: Power Field-Effect Transistor, 42A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Overview of IRL8113PBF by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Industrial Automation

Price & Stock for IRL8113PBF by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # 70017978
RS IRL8113PBF N-channel MOSFET Transistor, 105 A, 30 V, 3-Pin TO-220AB | Infineon IRL8113PBF RoHS: Not Compliant Min Qty: 5 Package Multiple: 1 Container: Bulk 0
  • 5 $0.7500
  • 25 $0.7100
  • 50 $0.6700
  • 500 $0.6400
  • 1,250 $0.6000
$0.6000 / $0.7500 RFQ

CAD Models for IRL8113PBF by Infineon Technologies AG
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Part Data Attributes for IRL8113PBF by Infineon Technologies AG

IRL8113PBF
Infineon Technologies AG
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
Infineon
Avalanche Energy Rating (Eas)
220 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
42 A
Drain-source On Resistance-Max
0.006 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
110 W
Pulsed Drain Current-Max (IDM)
420 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRL8113PBF
    Infineon Technologies AG
    Power Field-Effect Transistor, 42A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
    VS

Alternate Parts for IRL8113PBF

This table gives cross-reference parts and alternative options found for IRL8113PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRL8113PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRL8113PBF Power Field-Effect Transistor, 42A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRL8113PBF vs IRL8113PBF
Part Number Description Manufacturer Compare
IRL8113PBF Power Field-Effect Transistor, 42A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRL8113PBF vs IRL8113PBF

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