Datasheets
IRLIZ34GPBF by:

Power Field-Effect Transistor, 20A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, FULLPAK-3

Part Details for IRLIZ34GPBF by Vishay Siliconix

Overview of IRLIZ34GPBF by Vishay Siliconix

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRLIZ34GPBF

Part # Distributor Description Stock Price Buy
DISTI # IRLIZ34GPBF-ND
DigiKey MOSFET N-CH 60V 20A TO220-3 Min Qty: 1 Lead time: 20 Weeks Container: Tube 2225
In Stock
  • 1 $1.8000
  • 50 $1.4454
  • 100 $1.1893
  • 500 $1.0738
$1.0738 / $1.8000 Buy Now
Bristol Electronics   120
RFQ
Quest Components   96
  • 1 $4.2480
  • 25 $2.8320
  • 89 $2.6196
$2.6196 / $4.2480 Buy Now

Part Details for IRLIZ34GPBF

IRLIZ34GPBF CAD Models

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IRLIZ34GPBF Part Data Attributes:

IRLIZ34GPBF Vishay Siliconix
Buy Now Datasheet
Compare Parts:
IRLIZ34GPBF Vishay Siliconix Power Field-Effect Transistor, 20A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, FULLPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer VISHAY SILICONIX
Part Package Code TO-220AB
Package Description ROHS COMPLIANT, TO-220, FULLPAK-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 200 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.05 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 80 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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