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Part Details for IRLL014NTRPBF by Infineon Technologies AG
Results Overview of IRLL014NTRPBF by Infineon Technologies AG
- Distributor Offerings: (15 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
IRLL014NTRPBF Information
IRLL014NTRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRLL014NTRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
39M3590
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Newark | N Channel Mosfet, 55V, 2A, Sot-223, Channel Type:N Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:2A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon IRLL014NTRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 5556 |
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$0.2320 / $0.2530 | Buy Now |
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DISTI #
IRLL014NTRPBF
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Avnet Americas | Power MOSFET, N Channel, 55 V, 2.8 A, 140 Milliohms, SOT-223 (TO-261AA), 3 Pins, Surface Mount - Tape and Reel (Alt: IRLL014NTRPBF) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days Container: Reel | 5000 |
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$0.1695 / $0.2146 | Buy Now |
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DISTI #
39M3590
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Avnet Americas | Power MOSFET, N Channel, 55 V, 2.8 A, 140 Milliohms, SOT-223 (TO-261AA), 3 Pins, Surface Mount - Product that comes on tape, but is not reeled (Alt: 39M3590) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 5556 Partner Stock |
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$0.4440 / $0.7130 | Buy Now |
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DISTI #
IRLL014NTRPBF
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Avnet Americas | Power MOSFET, N Channel, 55 V, 2.8 A, 140 Milliohms, SOT-223 (TO-261AA), 3 Pins, Surface Mount - Tape and Reel (Alt: IRLL014NTRPBF) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.1696 / $0.1753 | Buy Now |
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DISTI #
70017101
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RS | MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.14Ohm, ID 2.8A, SOT-223,PD 2.1W, VGS +/-16V | Infineon IRLL014NTRPBF RoHS: Not Compliant Min Qty: 25 Package Multiple: 1 Container: Bulk | 0 |
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$0.5500 / $0.6500 | RFQ |
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Bristol Electronics | Min Qty: 10 | 964 |
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$0.1680 / $0.5250 | Buy Now |
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DISTI #
IRLL014NTRPBF
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TME | Transistor: N-MOSFET, unipolar, 55V, 2A, 2.1W, SOT223 Min Qty: 1 | 1462 |
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$0.2020 / $0.5930 | Buy Now |
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Ameya Holding Limited | Single N-Channel 55V 0.28 Ohm 14 nC HEXFET® Power Mosfet - SOT-223 | 15000 |
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RFQ | |
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Chip Stock | 1552 |
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RFQ | ||
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DISTI #
C1S322000502428
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Chip1Stop | MOSFET RoHS: Compliant Container: Cut Tape | 5000 |
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$0.2230 / $0.6630 | Buy Now |
Part Details for IRLL014NTRPBF
IRLL014NTRPBF CAD Models
IRLL014NTRPBF Part Data Attributes
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IRLL014NTRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRLL014NTRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT, PLASTIC PACKAGE-4
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SOT-223, 4 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 32 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 2 A | |
| Drain-source On Resistance-Max | 0.14 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 30 pF | |
| JEDEC-95 Code | TO-261AA | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.1 W | |
| Pulsed Drain Current-Max (IDM) | 16 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |