Datasheets
IRLL014NTRPBF by:

Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT, PLASTIC PACKAGE-4

Part Details for IRLL014NTRPBF by Infineon Technologies AG

Results Overview of IRLL014NTRPBF by Infineon Technologies AG

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IRLL014NTRPBF Information

IRLL014NTRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRLL014NTRPBF

Part # Distributor Description Stock Price Buy
DISTI # 39M3590
Newark N Channel Mosfet, 55V, 2A, Sot-223, Channel Type:N Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:2A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon IRLL014NTRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 5556
  • 1 $0.2510
  • 10 $0.2510
  • 25 $0.2510
  • 50 $0.2510
  • 100 $0.2510
  • 250 $0.2510
  • 500 $0.2510
  • 1,000 $0.2300
$0.2300 / $0.2510 Buy Now
DISTI # IRLL014NTRPBF
Avnet Americas Power MOSFET, N Channel, 55 V, 2.8 A, 140 Milliohms, SOT-223 (TO-261AA), 3 Pins, Surface Mount - Tape and Reel (Alt: IRLL014NTRPBF) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days Container: Reel 5000
  • 2,500 $0.2127
  • 5,000 $0.2116
  • 10,000 $0.1219
  • 15,000 $0.1209
  • 20,000 $0.1200
$0.1200 / $0.2127 Buy Now
DISTI # 39M3590
Avnet Americas Power MOSFET, N Channel, 55 V, 2.8 A, 140 Milliohms, SOT-223 (TO-261AA), 3 Pins, Surface Mount - Product that comes on tape, but is not reeled (Alt: 39M3590) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack 4549 Partner Stock
  • 1 $0.8370
  • 10 $0.5750
  • 25 $0.5220
  • 50 $0.4690
  • 100 $0.4160
$0.4160 / $0.8370 Buy Now
DISTI # 70017101
RS MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.14Ohm, ID 2.8A, SOT-223,PD 2.1W, VGS +/-16V | Infineon IRLL014NTRPBF RoHS: Not Compliant Min Qty: 25 Package Multiple: 1 Container: Bulk 0
  • 25 $0.6500
  • 250 $0.6200
  • 1,250 $0.5900
  • 2,500 $0.5500
$0.5500 / $0.6500 RFQ
Bristol Electronics   Min Qty: 7 964
  • 7 $0.7500
  • 21 $0.3750
  • 135 $0.2250
  • 668 $0.1500
$0.1500 / $0.7500 Buy Now
Bristol Electronics   Min Qty: 7 155
  • 7 $0.7500
  • 21 $0.3750
  • 135 $0.2250
$0.2250 / $0.7500 Buy Now
DISTI # IRLL014NTRPBF
TME Transistor: N-MOSFET, unipolar, 55V, 2A, 2.1W, SOT223 Min Qty: 1 880
  • 1 $0.5750
  • 10 $0.5140
  • 50 $0.4120
  • 100 $0.3650
  • 500 $0.2790
  • 1,000 $0.2530
  • 2,500 $0.2260
  • 5,000 $0.2110
  • 7,500 $0.2040
  • 12,500 $0.1960
$0.1960 / $0.5750 Buy Now
Ameya Holding Limited Single N-Channel 55V 0.28 Ohm 14 nC HEXFET® Power Mosfet - SOT-223 15000
RFQ
DISTI # C1S322000502428
Chip One Stop MOSFET RoHS: Compliant Container: Cut Tape 5000
  • 5 $0.6280
  • 50 $0.4400
  • 100 $0.3280
  • 200 $0.3270
  • 500 $0.2170
  • 1,000 $0.2130
  • 2,500 $0.2120
$0.2120 / $0.6280 Buy Now
Chip Stock   1552
RFQ
DISTI # SP001578654
EBV Elektronik Power MOSFET, N Channel, 55 V, 2.8 A, 140 Milliohms, SOT-223 (TO-261AA), 3 Pins, Surface Mount (Alt: SP001578654) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 11 Weeks, 0 Days EBV - 522500
Buy Now
LCSC 55V 2A 0.1410V2A 1W 1V250uA 1 N-channel SOT-223-3 MOSFETs ROHS 12860
  • 5 $0.2410
  • 50 $0.1929
  • 150 $0.1722
  • 500 $0.1398
  • 2,500 $0.1283
  • 5,000 $0.1215
$0.1215 / $0.2410 Buy Now
New Advantage Corporation Single N-Channel 55V 0.28 Ohm 14 nC HEXFET� Power Mosfet - SOT-223 RoHS: Compliant Min Qty: 1 Package Multiple: 2500 417500
  • 2,500 $0.4758
  • 417,500 $0.4403
$0.4403 / $0.4758 Buy Now
Win Source Electronics MOSFET N-CH 55V 2A SOT223 54800
  • 260 $0.1926
  • 555 $0.1802
  • 865 $0.1740
  • 1,240 $0.1616
  • 1,610 $0.1554
  • 2,015 $0.1492
$0.1492 / $0.1926 Buy Now

Part Details for IRLL014NTRPBF

IRLL014NTRPBF CAD Models

IRLL014NTRPBF Part Data Attributes

IRLL014NTRPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRLL014NTRPBF Infineon Technologies AG Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT, PLASTIC PACKAGE-4
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SOT-223, 4 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks, 3 Days
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 32 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 2 A
Drain-source On Resistance-Max 0.14 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 30 pF
JEDEC-95 Code TO-261AA
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.1 W
Pulsed Drain Current-Max (IDM) 16 A
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRLL014NTRPBF

This table gives cross-reference parts and alternative options found for IRLL014NTRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLL014NTRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FQT13N06LTF onsemi $0.2959 Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 2.8 A, 110 mΩ, SOT-223, SOT-223-4 / TO-261-4, 4000-REEL IRLL014NTRPBF vs FQT13N06LTF
IRLL014NTR Infineon Technologies AG Check for Price Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, IRLL014NTRPBF vs IRLL014NTR
IRLL014N Infineon Technologies AG Check for Price Small Signal Field-Effect Transistor IRLL014NTRPBF vs IRLL014N
FQT13N06LTF Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 2.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN IRLL014NTRPBF vs FQT13N06LTF
IRLL014N International Rectifier Check for Price Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, IRLL014NTRPBF vs IRLL014N

IRLL014NTRPBF Related Parts

IRLL014NTRPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRLL014NTRPBF is -40°C to 150°C.

  • Yes, the IRLL014NTRPBF is RoHS (Restriction of Hazardous Substances) compliant, meaning it meets the EU's directive on the restriction of hazardous substances in electrical and electronic equipment.

  • The typical rise time for the IRLL014NTRPBF is around 10-15 ns, but this can vary depending on the specific application and operating conditions.

  • Yes, the IRLL014NTRPBF is suitable for high-reliability applications, such as in automotive, industrial, and aerospace industries, due to its robust design and high-quality manufacturing process.

  • The recommended storage temperature range for the IRLL014NTRPBF is -40°C to 125°C, with a relative humidity of 60% or less.

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