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Power Field-Effect Transistor, 5A I(D), 55V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC9226
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Newark | Mosfet, N-Ch, 55V, 5A, Sot-223, Transistor Polarity:N Channel, Continuous Drain Current Id:5A, Drain Source Voltage Vds:55V, On Resistance Rds(On):0.048Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Dissipation Rohs Compliant: Yes |Infineon IRLL024ZTRPBF Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1300 |
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$0.4020 / $0.8850 | Buy Now |
DISTI #
86AK5407
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Newark | Mosfet, N-Ch, 55V, 5A, Sot-223 Rohs Compliant: Yes |Infineon IRLL024ZTRPBF Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.2780 / $0.3110 | Buy Now |
DISTI #
IRLL024ZTRPBFCT-ND
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DigiKey | MOSFET N-CH 55V 5A SOT223 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
15621 In Stock |
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$0.2406 / $0.7300 | Buy Now |
DISTI #
IRLL024ZTRPBF
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Avnet Americas | Trans MOSFET N-CH 55V 5A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: IRLL024ZTRPBF) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks, 0 Days Container: Reel | 5000 |
|
$0.2165 / $0.2647 | Buy Now |
DISTI #
IRLL024ZTRPBF
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Avnet Americas | Trans MOSFET N-CH 55V 5A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: IRLL024ZTRPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$0.2246 / $0.2727 | Buy Now |
DISTI #
942-IRLL024ZTRPBF
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Mouser Electronics | MOSFET MOSFT 55V 5A 60mOhm 7nC Log Lvl RoHS: Compliant | 31560 |
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$0.2400 / $0.7300 | Buy Now |
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Future Electronics | Single N-Channel 55 V 60 mOhm 7 nC HEXFET® Power Mosfet - SOT-223-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 5000Reel |
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$0.2350 / $0.2550 | Buy Now |
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Future Electronics | Single N-Channel 55 V 60 mOhm 7 nC HEXFET® Power Mosfet - SOT-223-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.2350 / $0.2550 | Buy Now |
DISTI #
IRLL024ZTRPBF
|
Avnet Americas | Trans MOSFET N-CH 55V 5A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: IRLL024ZTRPBF) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks, 0 Days Container: Reel | 5000 |
|
$0.2165 / $0.2647 | Buy Now |
DISTI #
IRLL024ZTRPBF
|
Avnet Americas | Trans MOSFET N-CH 55V 5A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: IRLL024ZTRPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$0.2246 / $0.2727 | Buy Now |
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IRLL024ZTRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRLL024ZTRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 5A I(D), 55V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | LEAD FREE PACKAGE-4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 20 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 21 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 5 A | |
Drain-source On Resistance-Max | 0.1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-261AA | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRLL024ZTRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLL024ZTRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRLL024ZPBF | Power Field-Effect Transistor, 5A I(D), 55V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4 | Infineon Technologies AG | IRLL024ZTRPBF vs IRLL024ZPBF |