-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 2.7A I(D), 60V, 0.092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO3, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
60R6446
|
Newark | N Channel Mosfet, 60V, 2.7A, Sot-23, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:2.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.5V Rohs Compliant: Yes |Infineon IRLML0060TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 280721 |
|
$0.1890 / $0.4680 | Buy Now |
DISTI #
99AK9910
|
Newark | Mosfet, N-Channel, 60V, 2.7A, Sot-23 Rohs Compliant: Yes |Infineon IRLML0060TRPBF Min Qty: 6000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.1080 / $0.1660 | Buy Now |
DISTI #
IRLML0060TRPBFCT-ND
|
DigiKey | MOSFET N-CH 60V 2.7A SOT23 Min Qty: 1 Lead time: 12 Weeks Container: Digi-ReelĀ®, Cut Tape (CT), Tape & Reel (TR) |
35349 In Stock |
|
$0.1105 / $0.5100 | Buy Now |
DISTI #
IRLML0060TRPBF
|
Avnet Americas | Trans MOSFET N-CH 60V 2.7A 3-Pin SOT-23 T/R - Tape and Reel (Alt: IRLML0060TRPBF) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$0.1021 / $0.1166 | Buy Now |
DISTI #
IRLML0060TRPBF
|
Avnet Americas | Trans MOSFET N-CH 60V 2.7A 3-Pin SOT-23 T/R - Tape and Reel (Alt: IRLML0060TRPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$0.1021 / $0.1239 | Buy Now |
DISTI #
IRLML0060TRPBF
|
Avnet Americas | Trans MOSFET N-CH 60V 2.7A 3-Pin SOT-23 T/R - Tape and Reel (Alt: IRLML0060TRPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Reel | 0 |
|
RFQ | |
DISTI #
942-IRLML0060TRPBF
|
Mouser Electronics | MOSFET MOSFT 60V 2.7A 92mOhm 2.5nC Qg RoHS: Compliant | 110868 |
|
$0.1160 / $0.4900 | Buy Now |
DISTI #
E02:0323_00821539
|
Arrow Electronics | Trans MOSFET N-CH 60V 2.7A 3-Pin SOT-23 T/R Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks Date Code: 2412 | Europe - 351000 |
|
$0.0983 / $0.1185 | Buy Now |
DISTI #
E21:3489_00821539
|
Arrow Electronics | Trans MOSFET N-CH 60V 2.7A 3-Pin SOT-23 T/R Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Date Code: 2403 | Europe - 1217 |
|
$0.1015 / $0.4531 | Buy Now |
DISTI #
V72:2272_13889715
|
Arrow Electronics | Trans MOSFET N-CH 60V 2.7A 3-Pin SOT-23 T/R Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Date Code: 2227 Container: Cut Strips | Americas - 74 |
|
$0.1926 / $0.4198 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
IRLML0060TRPBF
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IRLML0060TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 2.7A I(D), 60V, 0.092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO3, 3 PIN
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | MICRO3, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 2.7 A | |
Drain-source On Resistance-Max | 0.092 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.25 W | |
Pulsed Drain Current-Max (IDM) | 11 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |