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Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRLML2502TRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
9102981RL
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Farnell | MOSFET, N CHAN, 20V, 4.2A, SOT-23 RoHS: Compliant Min Qty: 100 Lead time: 13 Weeks, 1 Days Container: Reel | 26165 |
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$0.1017 / $0.1588 | Buy Now |
DISTI #
9102981
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Farnell | MOSFET, N CHAN, 20V, 4.2A, SOT-23 RoHS: Compliant Min Qty: 5 Lead time: 13 Weeks, 1 Days Container: Cut Tape | 26165 |
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$0.1017 / $0.4429 | Buy Now |
DISTI #
4335721
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Farnell | MOSFET, N-CH, 20V, 4.2A, SOT-23 RoHS: Compliant Min Qty: 6000 Lead time: 13 Weeks, 1 Days Container: Reel | 0 |
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$0.0980 / $0.0992 | Buy Now |
DISTI #
IRLML2502TRPBF
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Avnet Americas | Power MOSFET, N Channel, 20 V, 4.2 A, 45 Milliohms, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: IRLML2502TRPBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel | 78000 |
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$0.0674 / $0.0753 | Buy Now |
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Bristol Electronics | 30000 |
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RFQ | ||
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Bristol Electronics | Min Qty: 9 | 15318 |
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$0.0759 / $0.5625 | Buy Now |
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Bristol Electronics | 1725 |
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RFQ | ||
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Rochester Electronics | IRLML2502TRPBF - SMALL SIGNAL MOSFETS RoHS: Compliant Status: Active Min Qty: 1 | 11031 |
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$0.0768 / $0.0903 | Buy Now |
DISTI #
IRLML2502TRPBF
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TME | Transistor: N-MOSFET, unipolar, 20V, 4.2A, 1.25W, SOT23 Min Qty: 1 | 2623 |
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$0.0940 / $0.3800 | Buy Now |
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ComSIT USA | AVAILABLE EU | 2201 |
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RFQ |
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IRLML2502TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRLML2502TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SOT-23, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Infineon | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 4.2 A | |
Drain-source On Resistance-Max | 0.045 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 66 pF | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 1.25 W | |
Power Dissipation-Max (Abs) | 1.25 W | |
Pulsed Drain Current-Max (IDM) | 33 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRLML2502TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLML2502TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IRLML2502PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN AND LEAD FREE, MICRO-3 | IRLML2502TRPBF vs IRLML2502PBF |
IRLML2502GTRPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 | IRLML2502TRPBF vs IRLML2502GTRPBF |
IRLML2502GPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 | IRLML2502TRPBF vs IRLML2502GPBF |