Datasheets
IRLML2502TRPBF by:

Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3

Part Details for IRLML2502TRPBF by Infineon Technologies AG

Results Overview of IRLML2502TRPBF by Infineon Technologies AG

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IRLML2502TRPBF Information

IRLML2502TRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRLML2502TRPBF

Part # Distributor Description Stock Price Buy
DISTI # 9102981RL
Farnell MOSFET, N CHAN, 20V, 4.2A, SOT-23 RoHS: Compliant Min Qty: 100 Lead time: 13 Weeks, 1 Days Container: Reel 26165
  • 100 $0.1588
  • 500 $0.1327
  • 1,000 $0.1079
  • 5,000 $0.1017
$0.1017 / $0.1588 Buy Now
DISTI # 9102981
Farnell MOSFET, N CHAN, 20V, 4.2A, SOT-23 RoHS: Compliant Min Qty: 5 Lead time: 13 Weeks, 1 Days Container: Cut Tape 26165
  • 5 $0.4429
  • 10 $0.2990
  • 100 $0.1588
  • 500 $0.1327
  • 1,000 $0.1079
  • 5,000 $0.1017
$0.1017 / $0.4429 Buy Now
DISTI # 4335721
Farnell MOSFET, N-CH, 20V, 4.2A, SOT-23 RoHS: Compliant Min Qty: 6000 Lead time: 13 Weeks, 1 Days Container: Reel 0
  • 6,000 $0.0992
  • 18,000 $0.0980
$0.0980 / $0.0992 Buy Now
DISTI # IRLML2502TRPBF
Avnet Americas Power MOSFET, N Channel, 20 V, 4.2 A, 45 Milliohms, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: IRLML2502TRPBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel 78000
  • 3,000 $0.0753
  • 6,000 $0.0749
  • 12,000 $0.0681
  • 18,000 $0.0677
  • 24,000 $0.0674
$0.0674 / $0.0753 Buy Now
Bristol Electronics   30000
RFQ
Bristol Electronics   Min Qty: 9 15318
  • 9 $0.5625
  • 28 $0.2812
  • 179 $0.1687
  • 891 $0.1125
  • 3,113 $0.0844
  • 7,407 $0.0759
$0.0759 / $0.5625 Buy Now
Bristol Electronics   1725
RFQ
Rochester Electronics IRLML2502TRPBF - SMALL SIGNAL MOSFETS RoHS: Compliant Status: Active Min Qty: 1 11031
  • 1 $0.0903
  • 25 $0.0885
  • 100 $0.0849
  • 500 $0.0813
  • 1,000 $0.0768
$0.0768 / $0.0903 Buy Now
DISTI # IRLML2502TRPBF
TME Transistor: N-MOSFET, unipolar, 20V, 4.2A, 1.25W, SOT23 Min Qty: 1 2623
  • 1 $0.3800
  • 10 $0.2590
  • 50 $0.2100
  • 100 $0.1410
  • 500 $0.1260
  • 1,500 $0.1190
  • 2,000 $0.1140
  • 3,000 $0.1040
  • 6,000 $0.0980
  • 9,000 $0.0940
$0.0940 / $0.3800 Buy Now
ComSIT USA AVAILABLE EU 2201
RFQ
NexGen Digital   2
RFQ
DISTI # SMC-IRLML2502TRPBF
Sensible Micro Corporation Mosfet N-Ch 20V 4.2A Sot-23 RoHS: Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Date Code: 1713 Container: Tape & Reel 76560
  • 100 $0.0664
  • 500 $0.0647
  • 1,000 $0.0613
$0.0613 / $0.0664 RFQ
DISTI # SMC-IRLML2502TRPBF
Sensible Micro Corporation AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 5870
RFQ
DISTI # SMC-IRLML2502TRPBF
Sensible Micro Corporation 20V 4.2A 1.25W 45M@4.5V,4.2A N Channel Sot23 Mosfets Rohs RoHS: Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Date Code: 2008+ Container: Tape & Reel 1375
  • 100 $0.0664
  • 500 $0.0647
  • 1,000 $0.0613
$0.0613 / $0.0664 RFQ
DISTI # SMC-IRLML2502TRPBF
Sensible Micro Corporation Mosfet N-Ch 20V 4.2A Sot-23 RoHS: Not Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Date Code: 1008 Container: Tape & Reel 800
  • 100 $0.0664
  • 500 $0.0647
  • 1,000 $0.0613
$0.0613 / $0.0664 RFQ
DISTI # C1S322000502987
Chip One Stop MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape 104
  • 5 $0.4440
  • 50 $0.1060
$0.1060 / $0.4440 Buy Now
Chip Stock   13376
RFQ
Chip-Germany GmbH   RoHS: Not Compliant 2185
RFQ
DISTI # SP001558336
EBV Elektronik Power MOSFET N Channel 20 V 42 A 45 Milliohms SOT23 3 Pins Surface Mount (Alt: SP001558336) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days EBV - 183000
Buy Now
LCSC 20V 4.2A 1.25W 0.0454.5V4.2A 1.2V 1 N-channel SOT-23 MOSFETs ROHS 5750
  • 5 $0.1304
  • 50 $0.1082
  • 150 $0.0970
  • 500 $0.0887
  • 3,000 $0.0545
  • 6,000 $0.0512
$0.0512 / $0.1304 Buy Now
MacroQuest Electronics ISO 9001: 2015, ISO 14001:2015, ISO 45001:2018 5280
  • 500 $0.1800
  • 1,000 $0.1300
  • 3,000 $0.0700
$0.0700 / $0.1800 Buy Now
New Advantage Corporation 20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package RoHS: Compliant Min Qty: 1 Package Multiple: 3000 147000
  • 3,000 $0.2581
  • 147,000 $0.2388
$0.2388 / $0.2581 Buy Now
Win Source Electronics MOSFET N-CH 20V 4.2A SOT-23 275010
  • 930 $0.0538
  • 1,985 $0.0504
  • 3,090 $0.0486
  • 4,425 $0.0452
  • 5,765 $0.0434
  • 7,195 $0.0417
$0.0417 / $0.0538 Buy Now

Part Details for IRLML2502TRPBF

IRLML2502TRPBF CAD Models

IRLML2502TRPBF Part Data Attributes

IRLML2502TRPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRLML2502TRPBF Infineon Technologies AG Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SOT-23, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 4.2 A
Drain-source On Resistance-Max 0.045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 66 pF
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 1.25 W
Power Dissipation-Max (Abs) 1.25 W
Pulsed Drain Current-Max (IDM) 33 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRLML2502TRPBF

This table gives cross-reference parts and alternative options found for IRLML2502TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLML2502TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRLML2502PBF International Rectifier Check for Price Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN AND LEAD FREE, MICRO-3 IRLML2502TRPBF vs IRLML2502PBF
IRLML2502GTRPBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 IRLML2502TRPBF vs IRLML2502GTRPBF
IRLML2502GPBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 IRLML2502TRPBF vs IRLML2502GPBF

IRLML2502TRPBF Related Parts

IRLML2502TRPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRLML2502TRPBF is -55°C to 150°C.

  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and minimizing thermal resistance.

  • For optimal performance, it's recommended to follow Infineon's guidelines for PCB layout, including using a solid ground plane, minimizing trace lengths, and using a low-ESR capacitor for decoupling.

  • To prevent ESD damage, it's recommended to follow proper handling and storage procedures, use ESD-protective packaging, and implement ESD protection circuits in the design.

  • For optimal soldering and rework, it's recommended to follow Infineon's guidelines, including using a soldering temperature of 260°C (max), a soldering time of 10 seconds (max), and using a rework station with a temperature-controlled heat source.

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