Datasheets
IRLML6302GTRPBF by:

Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3

Part Details for IRLML6302GTRPBF by International Rectifier

Results Overview of IRLML6302GTRPBF by International Rectifier

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Applications Energy and Power Systems Renewable Energy Automotive

IRLML6302GTRPBF Information

IRLML6302GTRPBF by International Rectifier is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRLML6302GTRPBF

Part # Distributor Description Stock Price Buy
Bristol Electronics   851
RFQ

Part Details for IRLML6302GTRPBF

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IRLML6302GTRPBF Part Data Attributes

IRLML6302GTRPBF International Rectifier
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IRLML6302GTRPBF International Rectifier Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code SOT-23
Package Description MICRO-3, SOT-23, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.21.00.95
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 0.78 A
Drain-source On Resistance-Max 0.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 28 pF
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 0.54 W
Power Dissipation-Max (Abs) 0.54 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRLML6302GTRPBF

This table gives cross-reference parts and alternative options found for IRLML6302GTRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLML6302GTRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRLML6302TRPBF International Rectifier Check for Price Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3 IRLML6302GTRPBF vs IRLML6302TRPBF
IRLML6302TRPBF Infineon Technologies AG $0.1241 Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3 IRLML6302GTRPBF vs IRLML6302TRPBF
IRLML6302PBF Infineon Technologies AG $0.1363 Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 IRLML6302GTRPBF vs IRLML6302PBF
IRLML6302GTRPBF Infineon Technologies AG Check for Price Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 IRLML6302GTRPBF vs IRLML6302GTRPBF
IRLML6302 International Rectifier Check for Price Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3 IRLML6302GTRPBF vs IRLML6302
IRLML6302PBF International Rectifier Check for Price Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 IRLML6302GTRPBF vs IRLML6302PBF
IRLML6302TR International Rectifier Check for Price Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3 IRLML6302GTRPBF vs IRLML6302TR

IRLML6302GTRPBF Related Parts

IRLML6302GTRPBF Frequently Asked Questions (FAQ)

  • The thermal resistance of the IRLML6302GTRPBF is typically around 3.5°C/W (junction-to-ambient) and 1.5°C/W (junction-to-case). However, this value can vary depending on the specific application and PCB design.

  • Yes, the IRLML6302GTRPBF is suitable for high-frequency switching applications up to 1MHz. However, it's essential to ensure that the PCB layout and design are optimized for high-frequency operation to minimize losses and ringing.

  • To ensure reliability in high-temperature environments, it's crucial to follow proper derating guidelines, provide adequate heat sinking, and ensure that the device is operated within its recommended operating conditions. Additionally, consider using a thermally enhanced package or a heat sink to reduce the junction temperature.

  • The recommended gate drive voltage for the IRLML6302GTRPBF is between 4.5V and 10V. However, it's essential to ensure that the gate drive voltage is compatible with the specific application and does not exceed the maximum rated voltage of 12V.

  • Yes, the IRLML6302GTRPBF can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are properly matched, and the PCB layout is designed to minimize current imbalance and thermal mismatch.

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