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Transistors / Small Signal Field-Effect Transistors / IRLML6302TRPBF
Datasheets
IRLML6302TRPBF by:

Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3

Part Details for IRLML6302TRPBF by Infineon Technologies AG

Results Overview of IRLML6302TRPBF by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Energy and Power Systems Renewable Energy Automotive

IRLML6302TRPBF Information

IRLML6302TRPBF by Infineon Technologies AG is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRLML6302TRPBF

Part # Distributor Description Stock Price Buy
DISTI # 87AK1452
Newark Mosfet, P-Ch, 20V, 0.78A, Sot-23 Rohs Compliant: Yes |Infineon IRLML6302TRPBF RoHS: Compliant Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 6,000 $0.1130
  • 12,000 $0.1020
  • 24,000 $0.1020
  • 36,000 $0.1010
$0.1010 / $0.1130 Buy Now
DISTI # 97K2354
Avnet Americas Power MOSFET, P Channel, 20 V, 780 mA, 600 Milliohms, SOT-23, 3 Pins, Surface Mount - Product that comes on tape, but is not reeled (Alt: 97K2354) RoHS: Compliant Min Qty: 5 Package Multiple: 5 Lead time: 53 Weeks, 4 Days Container: Ammo Pack 0
  • 1 $0.4140
  • 10 $0.3180
  • 25 $0.2650
  • 50 $0.2220
  • 100 $0.1860
$0.1860 / $0.4140 Buy Now
Bristol Electronics   75
RFQ
Rochester Electronics IRLML6302 - 20V Single N-Channel Lead Free HEXFET Gower MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 1140
  • 1 $0.1008
  • 25 $0.0988
  • 100 $0.0948
  • 500 $0.0907
  • 1,000 $0.0857
$0.0857 / $0.1008 Buy Now
DISTI # IRLML6302TRPBF
TME Transistor: P-MOSFET, unipolar, -20V, -0.78A, 0.54W, SOT23 Min Qty: 1 667
  • 1 $0.2950
  • 10 $0.2360
  • 50 $0.1710
  • 100 $0.1480
  • 500 $0.1140
  • 1,500 $0.1000
  • 3,000 $0.0950
  • 9,000 $0.0880
  • 30,000 $0.0850
  • 45,000 $0.0840
$0.0840 / $0.2950 Buy Now
Velocity Electronics Our Stock 17999
RFQ
CHIPMALL.COM LIMITED 20V 780mA 540mW 0.6@4.5V,0.61A 1.5V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS 18476
  • 5 $0.0991
  • 50 $0.0815
  • 150 $0.0727
  • 500 $0.0660
  • 3,000 $0.0511
  • 6,000 $0.0485
$0.0485 / $0.0991 Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2022 Date Code: 2022 6000
  • 1 $0.1230
  • 10 $0.0930
  • 50 $0.0900
  • 100 $0.0870
  • 500 $0.0860
  • 1,000 $0.0840
$0.0840 / $0.1230 Buy Now
LCSC 20V 780mA 540mW 0.64.5V0.61A 1.5V250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS 18891
  • 5 $0.1032
  • 50 $0.0849
  • 150 $0.0757
  • 500 $0.0688
  • 3,000 $0.0532
  • 6,000 $0.0505
$0.0505 / $0.1032 Buy Now
Win Source Electronics Trans MOSFET P-CH 20V 0.78A 3-Pin SOT-23 T/R / MOSFET P-CH 20V 780MA SOT-23 121000
  • 895 $0.0560
  • 1,925 $0.0520
  • 3,000 $0.0500
  • 4,260 $0.0470
  • 5,560 $0.0450
  • 6,980 $0.0430
$0.0430 / $0.0560 Buy Now

Part Details for IRLML6302TRPBF

IRLML6302TRPBF CAD Models

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IRLML6302TRPBF Part Data Attributes

Parametric Data
IRLML6302TRPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRLML6302TRPBF Infineon Technologies AG Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.21.00.95
Factory Lead Time 53 Weeks, 4 Days
Samacsys Manufacturer Infineon
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 0.78 A
Drain-source On Resistance-Max 0.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 28 pF
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 0.54 W
Power Dissipation-Max (Abs) 0.54 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRLML6302TRPBF

This table gives cross-reference parts and alternative options found for IRLML6302TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLML6302TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRLML6302PBF International Rectifier Check for Price Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 IRLML6302TRPBF vs IRLML6302PBF
Part Number Manufacturer Composite Price Description Compare
IRLML6302GTRPBF Infineon Technologies AG Check for Price Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 IRLML6302TRPBF vs IRLML6302GTRPBF
UT6302G-AE3-R Unisonic Technologies Co Ltd Check for Price Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE PACKAGE-3 IRLML6302TRPBF vs UT6302G-AE3-R
IRLML6302GPBF Infineon Technologies AG Check for Price Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 IRLML6302TRPBF vs IRLML6302GPBF
IRLML6302PBF Infineon Technologies AG $0.1529 Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 IRLML6302TRPBF vs IRLML6302PBF
IRLML6302TR International Rectifier Check for Price Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3 IRLML6302TRPBF vs IRLML6302TR
IRLML6302 International Rectifier Check for Price Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3 IRLML6302TRPBF vs IRLML6302
UT6302L-AE3-R Unisonic Technologies Co Ltd Check for Price Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-3 IRLML6302TRPBF vs UT6302L-AE3-R
IRLML6302TRPBF-1 Infineon Technologies AG Check for Price Small Signal Field-Effect Transistor, P-Channel, Metal-Oxide Semiconductor FET IRLML6302TRPBF vs IRLML6302TRPBF-1
UT6302L-AE2-R Unisonic Technologies Co Ltd Check for Price Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, LEAD FREE PACKAGE-3 IRLML6302TRPBF vs UT6302L-AE2-R
IRLML6302GPBF International Rectifier Check for Price Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 IRLML6302TRPBF vs IRLML6302GPBF

IRLML6302TRPBF Related Parts

IRLML6302TRPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRLML6302TRPBF is -55°C to 150°C.

  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and minimizing thermal resistance.

  • To minimize EMI, it's recommended to use a multi-layer PCB with a solid ground plane, keep the power traces short and wide, and use shielding or filtering components as needed.

  • Yes, the IRLML6302TRPBF is suitable for high-frequency switching applications up to 1 MHz, but it's essential to consider the device's switching characteristics, gate drive requirements, and PCB layout to minimize ringing and oscillations.

  • To protect the IRLML6302TRPBF from ESD, it's recommended to follow proper handling and storage procedures, use ESD-protective packaging, and implement ESD protection circuits in the application.

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