Part Details for IRLML6402TR by International Rectifier
Overview of IRLML6402TR by International Rectifier
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRLML6402TR
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 2848 |
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RFQ | ||
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Bristol Electronics | 2273 |
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RFQ | ||
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Quest Components | MOSFET Transistor, P-Channel, TO-236AB | 1494 |
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$0.1500 / $0.5000 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-236AB | 1060 |
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$0.1500 / $0.5000 | Buy Now |
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Chip 1 Exchange | INSTOCK | 3600 |
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RFQ |
Part Details for IRLML6402TR
IRLML6402TR CAD Models
IRLML6402TR Part Data Attributes
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IRLML6402TR
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRLML6402TR
International Rectifier
Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO-3
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | SOT-23 | |
| Package Description | MICRO-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 11 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 3.7 A | |
| Drain-source On Resistance-Max | 0.065 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.3 W | |
| Pulsed Drain Current-Max (IDM) | 22 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRLML6402TR
This table gives cross-reference parts and alternative options found for IRLML6402TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLML6402TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRLML6402TRPBF | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 | International Rectifier | IRLML6402TR vs IRLML6402TRPBF |
| BL3435 | Small Signal MOSFET; Channel Polarity: P channel; PD Max (W): 1.4W; V(BR)DSS Min (V): -20V; ID Max (A): -3.5A; RDS(ON) Max (Ω): 0.07 Ohm; ID (A): -3.5A; VGS (V): -4.5V; VGS Max (V): -1V; ID (mA): -250mA; GFS Min (S): 15 S; VDS (V): -5V; ID (A) 1: -3.5A; Package: SOT-23 | Galaxy Microelectronics | IRLML6402TR vs BL3435 |
| IRLML6402 | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO-3 | International Rectifier | IRLML6402TR vs IRLML6402 |
| IRLML6402GTRPBF | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 | Infineon Technologies AG | IRLML6402TR vs IRLML6402GTRPBF |
| IRLML6402GPBF | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 | International Rectifier | IRLML6402TR vs IRLML6402GPBF |
| IRLML6402PBF | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN AND LEAD FREE, MICRO-3 | International Rectifier | IRLML6402TR vs IRLML6402PBF |
| IRLML6402TRPBF | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 | Infineon Technologies AG | IRLML6402TR vs IRLML6402TRPBF |