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Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
97K2355
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Newark | Mosfet, P-Ch, 20V, 3.7A, 150Deg C, 1.3W, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:3.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:550Mv Rohs Compliant: Yes |Infineon IRLML6402TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 150406 |
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$0.1300 / $0.4160 | Buy Now |
DISTI #
87AK1454
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Newark | Mosfet, P-Ch, 20V, 3.7A, Sot-23 Rohs Compliant: Yes |Infineon IRLML6402TRPBF RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.0990 / $0.1140 | Buy Now |
DISTI #
IRLML6402TRPBF
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Avnet Americas | Power MOSFET, P Channel, 20 V, 3.7 A, 65 Milliohms, SOT-23, 3Pins, Surface Mount - Tape and Reel (Alt: IRLML6402TRPBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel | 156000 |
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$0.0669 / $0.0914 | Buy Now |
DISTI #
IRLML6402TRPBF
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Avnet Americas | Power MOSFET, P Channel, 20 V, 3.7 A, 65 Milliohms, SOT-23, 3Pins, Surface Mount - Tape and Reel (Alt: IRLML6402TRPBF) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 53 Weeks, 1 Days Container: Reel | 0 |
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$0.0683 / $0.0705 | Buy Now |
DISTI #
97K2355
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Avnet Americas | Power MOSFET, P Channel, 20 V, 3.7 A, 65 Milliohms, SOT-23, 3Pins, Surface Mount - Product that comes on tape, but is not reeled (Alt: 97K2355) RoHS: Compliant Min Qty: 5 Package Multiple: 5 Lead time: 56 Weeks, 4 Days Container: Ammo Pack | 0 |
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$0.1870 / $0.4370 | Buy Now |
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Bristol Electronics | 5770 |
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RFQ | ||
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Bristol Electronics | 2994 |
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RFQ | ||
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Bristol Electronics | Min Qty: 9 | 143 |
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$0.3000 / $0.6000 | Buy Now |
DISTI #
IRLML6402TRPBF
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TME | Transistor: P-MOSFET, unipolar, -20V, -2.2A, 1.3W, SOT23 Min Qty: 1 | 13622 |
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$0.0790 / $0.3680 | Buy Now |
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Ameya Holding Limited | Single P-Channel 20 V 0.065 Ohm 8 nC HEXFET® Power Mosfet - MICRO-3 | 3000 |
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RFQ |
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IRLML6402TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRLML6402TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SOT-23, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Factory Lead Time | 56 Weeks, 4 Days | |
Samacsys Manufacturer | Infineon | |
Additional Feature | ULTRA LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 11 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 3.7 A | |
Drain-source On Resistance-Max | 0.065 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 110 pF | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation Ambient-Max | 1.3 W | |
Power Dissipation-Max (Abs) | 1.3 W | |
Pulsed Drain Current-Max (IDM) | 22 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRLML6402TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLML6402TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IRLML6402TRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 | IRLML6402TRPBF vs IRLML6402TRPBF |
UT2311G-AE3-R | Unisonic Technologies Co Ltd | Check for Price | Power Field-Effect Transistor, 4A I(D), 20V, 0.055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE PACKAGE-3 | IRLML6402TRPBF vs UT2311G-AE3-R |
IRLML6402GPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 | IRLML6402TRPBF vs IRLML6402GPBF |