Datasheets
IRLMS1503PBF by:

Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-6

Part Details for IRLMS1503PBF by Infineon Technologies AG

Overview of IRLMS1503PBF by Infineon Technologies AG

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Price & Stock for IRLMS1503PBF

Part # Distributor Description Stock Price Buy
DISTI # 9102574
element14 Asia-Pacific MOSFET, N, LOGIC, MICRO-6 RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $0.5613
  • 10 $0.4644
  • 100 $0.3771
  • 500 $0.3217
  • 1,000 $0.2692
  • 5,000 $0.2529
$0.2529 / $0.5613 Buy Now
DISTI # 9102574
Farnell MOSFET, N, LOGIC, MICRO-6 RoHS: Compliant Min Qty: 1 Lead time: 12 Weeks, 1 Days Container: Each 0
  • 1 $0.2047
$0.2047 Buy Now

Part Details for IRLMS1503PBF

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IRLMS1503PBF Part Data Attributes:

IRLMS1503PBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRLMS1503PBF Infineon Technologies AG Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-6
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature HIGH RELIABILITY
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 3.2 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.78 W
Pulsed Drain Current-Max (IDM) 18 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRLMS1503PBF

This table gives cross-reference parts and alternative options found for IRLMS1503PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLMS1503PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRLMS1503TR Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRLMS1503PBF vs IRLMS1503TR
IRLMS1503 Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 Infineon Technologies AG IRLMS1503PBF vs IRLMS1503
IRLMS1503PBF Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-6 International Rectifier IRLMS1503PBF vs IRLMS1503PBF
IRLMS1503TRPBF Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, International Rectifier IRLMS1503PBF vs IRLMS1503TRPBF
IRLMS1503TR Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG IRLMS1503PBF vs IRLMS1503TR
Part Number Description Manufacturer Compare
BSP100/T3 TRANSISTOR 3.5 A, 30 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors IRLMS1503PBF vs BSP100/T3
BSP100T/R TRANSISTOR 3.5 A, 30 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors IRLMS1503PBF vs BSP100T/R
IRLMS1503TRPBF Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, International Rectifier IRLMS1503PBF vs IRLMS1503TRPBF
IRLMS1503PBF Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-6 International Rectifier IRLMS1503PBF vs IRLMS1503PBF
934033440135 3.2A, 30V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, SC-73, 4 PIN NXP Semiconductors IRLMS1503PBF vs 934033440135
BSP100,135 BSP100 - N-channel TrenchMOS intermediate level FET@en-us SC-73 4-Pin Nexperia IRLMS1503PBF vs BSP100,135
IRLMS1503TR Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG IRLMS1503PBF vs IRLMS1503TR
IRLMS1503 Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 Infineon Technologies AG IRLMS1503PBF vs IRLMS1503
BSP100,135 BSP100 - N-channel TrenchMOS intermediate level FET SC-73 4-Pin NXP Semiconductors IRLMS1503PBF vs BSP100,135
IRLMS1503TR Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRLMS1503PBF vs IRLMS1503TR

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