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Part Details for IRLMS5703TRPBF by Infineon Technologies AG
Overview of IRLMS5703TRPBF by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRLMS5703TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRLMS5703TRPBF
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TME | Transistor: P-MOSFET, unipolar, -30V, -2.3A, 1.7W, TSOP6 Min Qty: 3000 | 0 |
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$0.1210 | RFQ |
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Chip1Cloud | MOSFET P-CH 30V 2.4A 6-TSOP | 10571 |
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RFQ | |
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DISTI #
1463248
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element14 Asia-Pacific | MOSFET, P, 6-TSOP RoHS: Compliant Min Qty: 5 Container: Cut Tape | 0 |
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$0.1410 / $0.3020 | Buy Now |
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DISTI #
1463248RL
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element14 Asia-Pacific | MOSFET, P, 6-TSOP RoHS: Compliant Min Qty: 100 Container: Reel | 0 |
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$0.1410 / $0.2038 | Buy Now |
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DISTI #
1463248
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Farnell | MOSFET, P, 6-TSOP RoHS: Compliant Min Qty: 1 Lead time: 8 Weeks, 1 Days Container: Cut Tape | 0 |
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$0.1476 / $0.4204 | Buy Now |
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DISTI #
1463248RL
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Farnell | MOSFET, P, 6-TSOP RoHS: Compliant Min Qty: 100 Lead time: 8 Weeks, 1 Days Container: Reel | 0 |
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$0.1476 / $0.2227 | Buy Now |
Part Details for IRLMS5703TRPBF
IRLMS5703TRPBF CAD Models
IRLMS5703TRPBF Part Data Attributes:
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IRLMS5703TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRLMS5703TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 2.4A I(D), 30V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-G6 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | ULTRA LOW RESISTANCE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 2.4 A | |
| Drain-source On Resistance-Max | 0.18 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 13 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRLMS5703TRPBF
This table gives cross-reference parts and alternative options found for IRLMS5703TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLMS5703TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRLMS5703TR | Power Field-Effect Transistor, 2.3A I(D), 30V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 | International Rectifier | IRLMS5703TRPBF vs IRLMS5703TR |
| IRLMS5703 | Power Field-Effect Transistor, 2.3A I(D), 30V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 | International Rectifier | IRLMS5703TRPBF vs IRLMS5703 |
| IRLMS5703 | Power Field-Effect Transistor, 2.3A I(D), 30V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 | Infineon Technologies AG | IRLMS5703TRPBF vs IRLMS5703 |
| IRLMS5703TRPBF | Power Field-Effect Transistor, 2.3A I(D), 30V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 | International Rectifier | IRLMS5703TRPBF vs IRLMS5703TRPBF |