Datasheets
IRLR014TRPBF by:

Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,

Part Details for IRLR014TRPBF by Vishay Intertechnologies

Overview of IRLR014TRPBF by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRLR014TRPBF

Part # Distributor Description Stock Price Buy
DISTI # 56AJ9933
Newark Mosfet, N-Ch, 60V, 7.7A, To-252 Rohs Compliant: Yes |Vishay IRLR014TRPBF Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 2272
  • 1 $1.0900
  • 10 $0.8910
  • 25 $0.8290
  • 50 $0.7650
  • 100 $0.7030
$0.7030 / $1.0900 Buy Now
DISTI # 38AH0603
Newark Logic Mosfet N-Channel 60V Rohs Compliant: No |Vishay IRLR014TRPBF Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,000 $0.8180
  • 4,000 $0.7420
  • 6,000 $0.7170
  • 10,000 $0.7010
$0.7010 / $0.8180 Buy Now
DISTI # 31K2371
Newark N Channel Mosfet, 60V, 7.7A, D-Pak, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:7.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:5V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Vishay IRLR014TRPBF Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel 0
Buy Now
DISTI # IRLR014TRPBF
Avnet Americas Trans MOSFET N-CH 60V 7.7A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRLR014TRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,000 $0.4358
  • 4,000 $0.4218
  • 8,000 $0.4078
  • 12,000 $0.3939
  • 16,000 $0.3786
  • 20,000 $0.3608
  • 200,000 $0.3430
$0.3430 / $0.4358 Buy Now
DISTI # 844-IRLR014TRPBF
Mouser Electronics MOSFET RECOMMENDED ALT IRLR014TR RoHS: Compliant 5704
  • 1 $0.9400
  • 10 $0.7650
  • 100 $0.5950
  • 500 $0.5290
  • 1,000 $0.4980
$0.4980 / $0.9400 Buy Now
Future Electronics Single N-Channel 60 V 0.2 Ohms Surface Mount Power Mosfet - DPAK (TO-252) RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel 2000
Reel
  • 2,000 $0.5250
  • 4,000 $0.5150
  • 6,000 $0.5050
  • 8,000 $0.5000
  • 10,000 $0.4900
$0.4900 / $0.5250 Buy Now
Future Electronics Single N-Channel 60 V 0.2 Ohms Surface Mount Power Mosfet - DPAK (TO-252) RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel 0
Reel
  • 2,000 $0.5250
  • 4,000 $0.5150
  • 6,000 $0.5050
  • 8,000 $0.5000
  • 10,000 $0.4900
$0.4900 / $0.5250 Buy Now
Bristol Electronics   714
RFQ
DISTI # IRLR014TRPBF
TTI MOSFET RECOMMENDED ALT IRLR014TR RoHS: Compliant pbFree: Pb-Free Min Qty: 2000 Package Multiple: 2000 Container: Reel Americas - 4000
In Stock
  • 2,000 $0.4500
  • 4,000 $0.4410
  • 6,000 $0.4320
  • 10,000 $0.3800
$0.3800 / $0.4500 Buy Now
DISTI # IRLR014TRPBF
Avnet Americas Trans MOSFET N-CH 60V 7.7A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRLR014TRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,000 $0.4358
  • 4,000 $0.4218
  • 8,000 $0.4078
  • 12,000 $0.3939
  • 16,000 $0.3786
  • 20,000 $0.3608
  • 200,000 $0.3430
$0.3430 / $0.4358 Buy Now
DISTI # IRLR014TRPBF
Avnet Americas Trans MOSFET N-CH 60V 7.7A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRLR014TRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,000 $0.4358
  • 4,000 $0.4218
  • 8,000 $0.4078
  • 12,000 $0.3939
  • 16,000 $0.3786
  • 20,000 $0.3608
  • 200,000 $0.3430
$0.3430 / $0.4358 Buy Now
ComSIT USA Power MOSFET Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant Europe - 4000
RFQ
DISTI # IRLR014TRPBF
Avnet Asia Trans MOSFET N-CH 60V 7.7A 3-Pin(2+Tab) DPAK T/R (Alt: IRLR014TRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 20 Weeks, 0 Days 0
RFQ
DISTI # IRLR014TRPBF
EBV Elektronik Trans MOSFET N-CH 60V 7.7A 3-Pin(2+Tab) DPAK T/R (Alt: IRLR014TRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 1 Weeks, 6 Days EBV - 0
Buy Now
DISTI # 3772730
element14 Asia-Pacific MOSFET, N-CH, 60V, 7.7A, TO-252 RoHS: Compliant Min Qty: 5 Container: Cut Tape 2272
  • 5 $0.8513
  • 50 $0.7632
  • 100 $0.6634
  • 500 $0.5622
  • 1,000 $0.5225
$0.5225 / $0.8513 Buy Now
DISTI # 3772730RL
element14 Asia-Pacific MOSFET, N-CH, 60V, 7.7A, TO-252 RoHS: Compliant Min Qty: 100 Container: Reel 2272
  • 100 $0.6634
  • 500 $0.5622
  • 1,000 $0.5225
$0.5225 / $0.6634 Buy Now
DISTI # 3772730
Farnell MOSFET, N-CH, 60V, 7.7A, TO-252 RoHS: Compliant Min Qty: 5 Lead time: 15 Weeks, 1 Days Container: Cut Tape 2272
  • 5 $0.8979
  • 50 $0.7718
  • 100 $0.6444
  • 500 $0.5457
  • 1,000 $0.5070
$0.5070 / $0.8979 Buy Now
DISTI # 3772730RL
Farnell MOSFET, N-CH, 60V, 7.7A, TO-252 RoHS: Compliant Min Qty: 100 Lead time: 15 Weeks, 1 Days Container: Reel 2272
  • 100 $0.6444
  • 500 $0.5457
  • 1,000 $0.5070
$0.5070 / $0.6444 Buy Now
DISTI # 4320344
Farnell MOSFET, N-CH, 60V, 7.7A, TO-252 RoHS: Compliant Min Qty: 2000 Lead time: 15 Weeks, 1 Days Container: Reel 0
  • 2,000 $0.4970
  • 6,000 $0.4870
$0.4870 / $0.4970 Buy Now

Part Details for IRLR014TRPBF

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IRLR014TRPBF Part Data Attributes

IRLR014TRPBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRLR014TRPBF Vishay Intertechnologies Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code not_compliant
Factory Lead Time 12 Weeks
Samacsys Manufacturer Vishay
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 27.4 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 7.7 A
Drain-source On Resistance-Max 0.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 25 W
Pulsed Drain Current-Max (IDM) 31 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish PURE MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRLR014TRPBF

This table gives cross-reference parts and alternative options found for IRLR014TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLR014TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRLR014 Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Vishay Intertechnologies IRLR014TRPBF vs IRLR014
IRLR014TR Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRLR014TRPBF vs IRLR014TR
IRLR014TRR Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRLR014TRPBF vs IRLR014TRR
IRLR014 Power Field-Effect Transistor, 6.7A I(D), 60V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRLR014TRPBF vs IRLR014
IRLR014TRPBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, International Rectifier IRLR014TRPBF vs IRLR014TRPBF
IRLR014TRLPBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, International Rectifier IRLR014TRPBF vs IRLR014TRLPBF
IRLR014PBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRLR014TRPBF vs IRLR014PBF
IRLR014TRLPBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, Vishay Intertechnologies IRLR014TRPBF vs IRLR014TRLPBF
IRLR014TRL Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRLR014TRPBF vs IRLR014TRL
Part Number Description Manufacturer Compare
IRLR014TR Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRLR014TRPBF vs IRLR014TR
IRLR014TRR Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRLR014TRPBF vs IRLR014TRR
IRLR014TRL Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRLR014TRPBF vs IRLR014TRL
IRLR014 Power Field-Effect Transistor, 6.7A I(D), 60V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRLR014TRPBF vs IRLR014
IRLR014TRLPBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, Vishay Intertechnologies IRLR014TRPBF vs IRLR014TRLPBF
IRLR014 Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Vishay Intertechnologies IRLR014TRPBF vs IRLR014
IRLR014TRLPBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, International Rectifier IRLR014TRPBF vs IRLR014TRLPBF
IRLR014PBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRLR014TRPBF vs IRLR014PBF
IRLR014TRPBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, International Rectifier IRLR014TRPBF vs IRLR014TRPBF

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