Datasheets
IRLR014TRPBF by:

Trans MOSFET N-CH 60V 7.7A 3-Pin(2+Tab) DPAK T/R

Part Details for IRLR014TRPBF by Vishay Siliconix

Overview of IRLR014TRPBF by Vishay Siliconix

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRLR014TRPBF

Part # Distributor Description Stock Price Buy
DISTI # IRLR014PBFCT-ND
DigiKey MOSFET N-CH 60V 7.7A DPAK Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 7385
In Stock
  • 1 $1.0100
  • 10 $0.8280
  • 100 $0.6439
  • 500 $0.5458
  • 1,000 $0.4446
  • 2,000 $0.4186
  • 6,000 $0.3986
  • 10,000 $0.3802
$0.3802 / $1.0100 Buy Now
DISTI # 70616417
RS IRLR014TRPBF N-channel MOSFET Transistor, 7.7 A, 60 V, 3-Pin TO-252 | Siliconix / Vishay IRLR014TRPBF RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Container: Bulk 0
  • 10 $0.4280
  • 100 $0.4060
  • 500 $0.3850
  • 1,000 $0.3630
$0.3630 / $0.4280 RFQ
New Advantage Corporation Single N-Channel 60 V 0.2 Ohms Surface Mount Power Mosfet - DPAK (TO-252) RoHS: Compliant Min Qty: 1 Package Multiple: 2000 16000
  • 2,000 $0.4357
  • 16,000 $0.4067
$0.4067 / $0.4357 Buy Now

Part Details for IRLR014TRPBF

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IRLR014TRPBF Part Data Attributes:

IRLR014TRPBF Vishay Siliconix
Buy Now Datasheet
Compare Parts:
IRLR014TRPBF Vishay Siliconix Trans MOSFET N-CH 60V 7.7A 3-Pin(2+Tab) DPAK T/R
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY SILICONIX
Part Package Code TO-252
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 27.4 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 7.7 A
Drain-source On Resistance-Max 0.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 25 W
Pulsed Drain Current-Max (IDM) 31 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRLR014TRPBF

This table gives cross-reference parts and alternative options found for IRLR014TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLR014TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRLR014TRPBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, Vishay Intertechnologies IRLR014TRPBF vs IRLR014TRPBF
IRLR014 Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Vishay Intertechnologies IRLR014TRPBF vs IRLR014
IRLR014TRL Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRLR014TRPBF vs IRLR014TRL
IRLR014TRLPBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, Vishay Intertechnologies IRLR014TRPBF vs IRLR014TRLPBF
IRLR014TRPBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, International Rectifier IRLR014TRPBF vs IRLR014TRPBF
IRLR014 Power Field-Effect Transistor, 6.7A I(D), 60V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRLR014TRPBF vs IRLR014
IRLR014PBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRLR014TRPBF vs IRLR014PBF
IRLR014PBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Vishay Intertechnologies IRLR014TRPBF vs IRLR014PBF
IRLR014TR Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRLR014TRPBF vs IRLR014TR
IRLR014TRLPBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, International Rectifier IRLR014TRPBF vs IRLR014TRLPBF
Part Number Description Manufacturer Compare
IRLR014TRPBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, Vishay Intertechnologies IRLR014TRPBF vs IRLR014TRPBF
IRLR014PBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Vishay Intertechnologies IRLR014TRPBF vs IRLR014PBF
IRLR014TR Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRLR014TRPBF vs IRLR014TR
IRLR014TRL Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRLR014TRPBF vs IRLR014TRL
IRLR014TRLPBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, Vishay Intertechnologies IRLR014TRPBF vs IRLR014TRLPBF
IRLR014 Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Vishay Intertechnologies IRLR014TRPBF vs IRLR014
IRLR014TRPBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, International Rectifier IRLR014TRPBF vs IRLR014TRPBF
IRLR014TRLPBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, International Rectifier IRLR014TRPBF vs IRLR014TRLPBF
IRLR014PBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRLR014TRPBF vs IRLR014PBF
IRLR014 Power Field-Effect Transistor, 6.7A I(D), 60V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRLR014TRPBF vs IRLR014

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