Datasheets
IRLR024NTRPBF by:

Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3

Part Details for IRLR024NTRPBF by Infineon Technologies AG

Results Overview of IRLR024NTRPBF by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Medical Imaging Automotive Robotics and Drones

IRLR024NTRPBF Information

IRLR024NTRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRLR024NTRPBF

Part # Distributor Description Stock Price Buy
DISTI # 63J7621
Newark N Channel Mosfet, 55V, 17A, D-Pak, Channel Type:N Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:17A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon IRLR024NTRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 1996
  • 1 $0.8060
  • 10 $0.6190
  • 25 $0.5630
  • 50 $0.5050
  • 100 $0.4490
  • 250 $0.4110
$0.4110 / $0.8060 Buy Now
DISTI # 86AK5412
Newark Mosfet, N-Ch, 55V, 17A, To-252Aa Rohs Compliant: Yes |Infineon IRLR024NTRPBF RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 2,000 $0.3380
  • 4,000 $0.3270
  • 8,000 $0.3150
  • 12,000 $0.3030
  • 20,000 $0.2960
$0.2960 / $0.3380 Buy Now
DISTI # 63J7621
Avnet Americas Trans MOSFET N-CH 55V 17A 3-Pin(2+Tab) DPAK T/R - Product that comes on tape, but is not reeled (Alt: 63J7621) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 11 Weeks, 1 Days Container: Ammo Pack 13 Partner Stock
  • 1 $0.7670
  • 10 $0.5800
  • 25 $0.5240
  • 50 $0.4670
  • 100 $0.4110
$0.4110 / $0.7670 Buy Now
DISTI # IRLR024NTRPBF
Avnet Americas Trans MOSFET N-CH 55V 17A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRLR024NTRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 18 Weeks, 0 Days Container: Reel 0
  • 2,000 $0.1943
  • 4,000 $0.1933
  • 8,000 $0.1923
  • 12,000 $0.1633
  • 16,000 $0.1619
$0.1619 / $0.1943 Buy Now
DISTI # 70017456
RS MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.065Ohm, ID 17A, D-Pak (TO-252AA),PD 45W | Infineon IRLR024NTRPBF RoHS: Not Compliant Min Qty: 25 Package Multiple: 1 Container: Bulk 0
  • 25 $0.6100
  • 250 $0.5800
  • 1,250 $0.5500
  • 2,500 $0.5200
$0.5200 / $0.6100 RFQ
Bristol Electronics   342
RFQ
Rochester Electronics IRLR024N - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 95
  • 1 $0.2286
  • 25 $0.2240
  • 100 $0.2149
  • 500 $0.2057
  • 1,000 $0.1943
$0.1943 / $0.2286 Buy Now
DISTI # IRLR024NTRPBF
TME Transistor: N-MOSFET, unipolar, 55V, 17A, 38W, DPAK Min Qty: 1 12551
  • 1 $0.7480
  • 50 $0.5500
  • 100 $0.4870
  • 250 $0.4130
  • 500 $0.3650
  • 1,000 $0.3260
  • 2,000 $0.2960
  • 4,000 $0.2700
  • 6,000 $0.2580
$0.2580 / $0.7480 Buy Now
Ameya Holding Limited Single N-Channel 55 V 0.11 Ohm 15 nC HEXFET® Power Mosfet - TO-252AA 2000
RFQ
ComSIT USA Electronic Component RoHS: Compliant Stock DE - 0
Stock ES - 156
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # C1S327400186490
Chip One Stop Trans MOSFET N-CH Si 55V 17A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant Container: Cut Tape 3787
  • 5 $0.5640
  • 50 $0.2310
  • 200 $0.2300
  • 500 $0.2290
  • 1,000 $0.2240
$0.2240 / $0.5640 Buy Now
DISTI # SP001578872
EBV Elektronik Trans MOSFET N-CH 55V 17A 3-Pin(2+Tab) DPAK T/R (Alt: SP001578872) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 19 Weeks, 0 Days EBV - 1944000
Buy Now
LCSC 55V 17A 45W 0.06510V10A 1V250uA 1 N-channel TO-252-2(DPAK) MOSFETs ROHS 16290
  • 5 $0.2371
  • 50 $0.1879
  • 150 $0.1669
  • 500 $0.1407
  • 2,000 $0.1305
  • 4,000 $0.1235
$0.1235 / $0.2371 Buy Now
New Advantage Corporation Single N-Channel 55 V 0.11 Ohm 15 nC HEXFET� Power Mosfet - TO-252AA RoHS: Compliant Min Qty: 1 Package Multiple: 2000 1554000
  • 2,000 $0.6048
  • 1,554,000 $0.5597
$0.5597 / $0.6048 Buy Now
Win Source Electronics MOSFET N-CH 55V 17A DPAK 45830
  • 330 $0.1528
  • 700 $0.1430
  • 1,090 $0.1381
  • 1,565 $0.1282
  • 2,030 $0.1233
  • 2,540 $0.1183
$0.1183 / $0.1528 Buy Now

Part Details for IRLR024NTRPBF

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IRLR024NTRPBF Part Data Attributes

IRLR024NTRPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRLR024NTRPBF Infineon Technologies AG Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 11 Weeks, 1 Day
Samacsys Manufacturer Infineon
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Avalanche Energy Rating (Eas) 68 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 17 A
Drain-source On Resistance-Max 0.08 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 45 W
Pulsed Drain Current-Max (IDM) 72 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRLR024NTRPBF

This table gives cross-reference parts and alternative options found for IRLR024NTRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLR024NTRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRLR024NTRPBF International Rectifier Check for Price Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 IRLR024NTRPBF vs IRLR024NTRPBF
AUIRLR024NTRL International Rectifier Check for Price Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 IRLR024NTRPBF vs AUIRLR024NTRL
IRLR024NPBF International Rectifier Check for Price Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 IRLR024NTRPBF vs IRLR024NPBF
AUIRLR024N International Rectifier Check for Price Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 IRLR024NTRPBF vs AUIRLR024N
IRLR024NTRRPBF International Rectifier Check for Price Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 IRLR024NTRPBF vs IRLR024NTRRPBF
Part Number Manufacturer Composite Price Description Compare
IRLR024NTRL International Rectifier Check for Price Power Field-Effect Transistor, 17A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA IRLR024NTRPBF vs IRLR024NTRL
STD20NF06L STMicroelectronics Check for Price 24A, 60V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, ROHS COMPLIANT, DPAK-3 IRLR024NTRPBF vs STD20NF06L
IRLR024NPBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 IRLR024NTRPBF vs IRLR024NPBF
IRLR024N Infineon Technologies AG Check for Price Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 IRLR024NTRPBF vs IRLR024N
AUIRLR024NTRL Infineon Technologies AG Check for Price Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 IRLR024NTRPBF vs AUIRLR024NTRL
IRLR024NTRLPBF Infineon Technologies AG $0.6182 Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 IRLR024NTRPBF vs IRLR024NTRLPBF

IRLR024NTRPBF Related Parts

IRLR024NTRPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRLR024NTRPBF is -55°C to 150°C.

  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within the recommended voltage and current ratings.

  • Use a multi-layer PCB with a solid ground plane, keep the device close to the heat sink, and use short, wide traces for the drain and source connections to minimize inductance.

  • Yes, the IRLR024NTRPBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize ringing and oscillations.

  • Use proper ESD handling procedures, such as wearing an ESD strap, using ESD-safe materials, and storing the devices in ESD-safe packaging.

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