Part Details for IRLR120NTRLPBF by Infineon Technologies AG
Overview of IRLR120NTRLPBF by Infineon Technologies AG
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for IRLR120NTRLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
34AC1792
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Newark | Mosfet, N-Ch, 100V, 10A, To-252Aa, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:10A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon IRLR120NTRLPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 9196 |
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$0.4680 / $1.1300 | Buy Now |
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DISTI #
448-IRLR120NTRLPBFCT-ND
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DigiKey | MOSFET N-CH 100V 10A DPAK Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2450 In Stock |
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$0.4120 / $1.1000 | Buy Now |
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DISTI #
IRLR120NTRLPBF
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Avnet Americas | Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRLR120NTRLPBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.3839 / $0.4387 | Buy Now |
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DISTI #
IRLR120NTRLPBF
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Avnet Americas | Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRLR120NTRLPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.3839 / $0.4661 | Buy Now |
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DISTI #
IRLR120NTRLPBF
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Avnet Americas | Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRLR120NTRLPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Reel | 0 |
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RFQ | |
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DISTI #
34AC1792
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Avnet Americas | Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) DPAK T/R - Product that comes on tape, but is not reeled (Alt: 34AC1792) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 3516 Partner Stock |
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$0.6600 / $1.1400 | Buy Now |
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DISTI #
942-IRLR120NTRLPBF
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Mouser Electronics | MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv RoHS: Compliant | 2777 |
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$0.4110 / $1.0800 | Buy Now |
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Future Electronics | Single N-Channel 100 V 185 mOhm 13.3 nC HEXFET® Power Mosfet - DPAK RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.4050 / $0.4250 | Buy Now |
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Future Electronics | Single N-Channel 100 V 185 mOhm 13.3 nC HEXFET® Power Mosfet - DPAK RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.4050 / $0.4250 | Buy Now |
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DISTI #
IRLR120NTRLPBF
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Avnet Americas | Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRLR120NTRLPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.3839 / $0.4661 | Buy Now |
Part Details for IRLR120NTRLPBF
IRLR120NTRLPBF CAD Models
IRLR120NTRLPBF Part Data Attributes
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IRLR120NTRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRLR120NTRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 85 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.225 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 48 W | |
| Pulsed Drain Current-Max (IDM) | 35 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRLR120NTRLPBF
This table gives cross-reference parts and alternative options found for IRLR120NTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLR120NTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRLR120NTRL | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRLR120NTRLPBF vs IRLR120NTRL |
| AUIRLR120NTR | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | IRLR120NTRLPBF vs AUIRLR120NTR |
| IRLR120N | Power Field-Effect Transistor, 8.4A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Fairchild Semiconductor Corporation | IRLR120NTRLPBF vs IRLR120N |
| IRLR120NTRPBF | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRLR120NTRLPBF vs IRLR120NTRPBF |
| IRLR120N | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRLR120NTRLPBF vs IRLR120N |
| IRLR120NTRR | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRLR120NTRLPBF vs IRLR120NTRR |
| IRLR120NTRPBF | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRLR120NTRLPBF vs IRLR120NTRPBF |
| AUIRLR120N | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | IRLR120NTRLPBF vs AUIRLR120N |
| IRLR120NPBF | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRLR120NTRLPBF vs IRLR120NPBF |
| AUIRLR120N | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Infineon Technologies AG | IRLR120NTRLPBF vs AUIRLR120N |