There are no models available for this part yet.
Overview of IRLR2703TR by International Rectifier
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 3 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for IRLR2703TR by International Rectifier
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
Bristol Electronics | 72 |
|
RFQ | ||||
Quest Components | MOSFET Transistor, N-Channel, TO-252AA | 108 |
|
$0.4900 / $1.0500 | Buy Now | ||
Quest Components | MOSFET Transistor, N-Channel, TO-252AA | 57 |
|
$0.6300 / $1.0500 | Buy Now |
CAD Models for IRLR2703TR by International Rectifier
Part Data Attributes for IRLR2703TR by International Rectifier
|
|
---|---|
Rohs Code
|
No
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
INTERNATIONAL RECTIFIER CORP
|
Part Package Code
|
TO-252AA
|
Package Description
|
SMALL OUTLINE, R-PSSO-G2
|
Pin Count
|
3
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Additional Feature
|
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
|
Avalanche Energy Rating (Eas)
|
77 mJ
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
30 V
|
Drain Current-Max (ID)
|
20 A
|
Drain-source On Resistance-Max
|
0.045 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-252AA
|
JESD-30 Code
|
R-PSSO-G2
|
JESD-609 Code
|
e0
|
Moisture Sensitivity Level
|
1
|
Number of Elements
|
1
|
Number of Terminals
|
2
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
175 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
240
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
45 W
|
Pulsed Drain Current-Max (IDM)
|
96 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
YES
|
Terminal Finish
|
Tin/Lead (Sn/Pb)
|
Terminal Form
|
GULL WING
|
Terminal Position
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s)
|
30
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for IRLR2703TR
This table gives cross-reference parts and alternative options found for IRLR2703TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLR2703TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRLR2703TRLPBF | Power Field-Effect Transistor, 23A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRLR2703TR vs IRLR2703TRLPBF |
AUIRLR2703TRR | Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | IRLR2703TR vs AUIRLR2703TRR |
AUIRLR2703 | Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Infineon Technologies AG | IRLR2703TR vs AUIRLR2703 |
IRLR2703TRRPBF | Power Field-Effect Transistor, 23A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRLR2703TR vs IRLR2703TRRPBF |
IRLR2703TRPBF | Power Field-Effect Transistor, 23A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRLR2703TR vs IRLR2703TRPBF |
AUIRLR2703 | Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | IRLR2703TR vs AUIRLR2703 |
IRLR2703TRR | Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRLR2703TR vs IRLR2703TRR |
IRLR2703TRL | Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRLR2703TR vs IRLR2703TRL |
AUIRLR2703TRL | Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Infineon Technologies AG | IRLR2703TR vs AUIRLR2703TRL |
IRLR2703PBF | Power Field-Effect Transistor, 23A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | Infineon Technologies AG | IRLR2703TR vs IRLR2703PBF |