Part Details for IRLR3705ZPBF by Infineon Technologies AG
Overview of IRLR3705ZPBF by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for IRLR3705ZPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
IRLR3705ZPBF-ND
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DigiKey | MOSFET N-CH 55V 42A DPAK Lead time: 98 Weeks Container: Tube | Limited Supply - Call |
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Buy Now | |
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DISTI #
SMC-IRLR3705ZPBF
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Sensible Micro Corporation | Mosfet N-Ch 55V 42A Dpak RoHS: Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Container: Tubes | 1076 |
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$0.3920 / $0.4655 | RFQ |
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Chip1Cloud | MOSFET N-CH 55V 42A DPAK | 36100 |
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RFQ | |
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DISTI #
2142686
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element14 Asia-Pacific | RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$0.7906 / $1.8694 | Buy Now |
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Win Source Electronics | MOSFET N-CH 55V 42A DPAK | 31500 |
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$0.4710 / $0.7070 | Buy Now |
Part Details for IRLR3705ZPBF
IRLR3705ZPBF CAD Models
IRLR3705ZPBF Part Data Attributes:
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IRLR3705ZPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRLR3705ZPBF
Infineon Technologies AG
Power Field-Effect Transistor, 42A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 190 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 42 A | |
| Drain-source On Resistance-Max | 0.008 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 130 W | |
| Pulsed Drain Current-Max (IDM) | 360 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRLR3705ZPBF
This table gives cross-reference parts and alternative options found for IRLR3705ZPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLR3705ZPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRLR3705Z | Power Field-Effect Transistor, 42A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Infineon Technologies AG | IRLR3705ZPBF vs IRLR3705Z |
| IRLR3705ZTRPBF | Power Field-Effect Transistor, 42A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRLR3705ZPBF vs IRLR3705ZTRPBF |
| IRLR3705ZTR | Power Field-Effect Transistor, 42A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Infineon Technologies AG | IRLR3705ZPBF vs IRLR3705ZTR |
| IRLR3705ZTRLPBF | Power Field-Effect Transistor, 42A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRLR3705ZPBF vs IRLR3705ZTRLPBF |
| IRLR3705ZTRR | Power Field-Effect Transistor, 42A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Infineon Technologies AG | IRLR3705ZPBF vs IRLR3705ZTRR |
| AUIRLR3705ZTR | Power Field-Effect Transistor, 42A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | IRLR3705ZPBF vs AUIRLR3705ZTR |
| IRLR3705ZTRL | Power Field-Effect Transistor, 42A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Infineon Technologies AG | IRLR3705ZPBF vs IRLR3705ZTRL |
| IRLR3705ZTRPBF | Power Field-Effect Transistor, 42A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRLR3705ZPBF vs IRLR3705ZTRPBF |
| AUIRLR3705ZTRL | Power Field-Effect Transistor, 42A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Infineon Technologies AG | IRLR3705ZPBF vs AUIRLR3705ZTRL |
| IRLR3705ZTRR | Power Field-Effect Transistor, 42A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRLR3705ZPBF vs IRLR3705ZTRR |