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Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
70017850
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RS | Power MOSFET, N-Ch, VDSS 55V, RDS(ON) 0.06Ohm, ID 18A, D2Pak, PD 45W, VGS+/-16V, Qg 15nC | Infineon IRLZ24NSTRLPBF RoHS: Not Compliant Min Qty: 16 Package Multiple: 1 Container: Bulk | 0 |
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$1.0000 / $1.2500 | RFQ |
|
Bristol Electronics | 481 |
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RFQ | ||
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Rochester Electronics | IRLZ24NS - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 9769 |
|
$0.4321 / $0.5084 | Buy Now |
DISTI #
IRLZ24NSTRLPBF
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TME | Transistor: N-MOSFET, unipolar, 55V, 18A, 45W, D2PAK Min Qty: 800 | 0 |
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$0.4180 | RFQ |
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Chip1Cloud | MOSFET N-CH 55V 18A D2PAK | 46000 |
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RFQ | |
DISTI #
2726032
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element14 Asia-Pacific | MOSFET, N-CH, 55V, 18A, TO-263 RoHS: Compliant Min Qty: 1 Container: Cut Tape | 8 |
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$0.6216 / $1.2565 | Buy Now |
DISTI #
2726032RL
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element14 Asia-Pacific | MOSFET, N-CH, 55V, 18A, TO-263 RoHS: Compliant Min Qty: 100 Container: Reel | 8 |
|
$0.6216 / $1.2121 | Buy Now |
DISTI #
2726032
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Farnell | MOSFET, N-CH, 55V, 18A, TO-263 RoHS: Compliant Min Qty: 1 Lead time: 11 Weeks, 1 Days Container: Cut Tape | 8 |
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$0.4543 / $1.3678 | Buy Now |
DISTI #
2726032RL
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Farnell | MOSFET, N-CH, 55V, 18A, TO-263 RoHS: Compliant Min Qty: 100 Lead time: 11 Weeks, 1 Days Container: Reel | 8 |
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$0.4543 / $0.7818 | Buy Now |
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LCSC | 55V 18A 60m11A10V 2V250uA 1PCSNChannel D2PAK MOSFETs ROHS | 14 |
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$0.5581 / $1.0311 | Buy Now |
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IRLZ24NSTRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRLZ24NSTRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC PACKAGE-3
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 52 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 68 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 18 A | |
Drain-source On Resistance-Max | 0.075 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 72 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRLZ24NSTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLZ24NSTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRLZ24NSPBF | Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC PACKAGE-3 | Infineon Technologies AG | IRLZ24NSTRLPBF vs IRLZ24NSPBF |
IRLZ24NSTRR | Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | IRLZ24NSTRLPBF vs IRLZ24NSTRR |
IRLZ24NSTRRPBF | Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC PACKAGE-3 | International Rectifier | IRLZ24NSTRLPBF vs IRLZ24NSTRRPBF |
IRLZ24NSPBF | Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC PACKAGE-3 | International Rectifier | IRLZ24NSTRLPBF vs IRLZ24NSPBF |
IRLZ24NSTRRPBF | Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC PACKAGE-3 | Infineon Technologies AG | IRLZ24NSTRLPBF vs IRLZ24NSTRRPBF |
IRLZ24NSTRLPBF | Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC PACKAGE-3 | International Rectifier | IRLZ24NSTRLPBF vs IRLZ24NSTRLPBF |
IRLZ24NSTRL | Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | IRLZ24NSTRLPBF vs IRLZ24NSTRL |