Datasheets
IRLZ24NSTRLPBF by:

Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC PACKAGE-3

Part Details for IRLZ24NSTRLPBF by Infineon Technologies AG

Overview of IRLZ24NSTRLPBF by Infineon Technologies AG

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Price & Stock for IRLZ24NSTRLPBF

Part # Distributor Description Stock Price Buy
DISTI # 70017850
RS Power MOSFET, N-Ch, VDSS 55V, RDS(ON) 0.06Ohm, ID 18A, D2Pak, PD 45W, VGS+/-16V, Qg 15nC | Infineon IRLZ24NSTRLPBF RoHS: Not Compliant Min Qty: 16 Package Multiple: 1 Container: Bulk 0
  • 16 $1.2500
  • 80 $1.1900
  • 160 $1.1200
  • 1,600 $1.0600
  • 4,000 $1.0000
$1.0000 / $1.2500 RFQ
Bristol Electronics   481
RFQ
Rochester Electronics IRLZ24NS - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 9769
  • 1 $0.5084
  • 25 $0.4982
  • 100 $0.4779
  • 500 $0.4576
  • 1,000 $0.4321
$0.4321 / $0.5084 Buy Now
DISTI # IRLZ24NSTRLPBF
TME Transistor: N-MOSFET, unipolar, 55V, 18A, 45W, D2PAK Min Qty: 800 0
  • 800 $0.4180
$0.4180 RFQ
Chip1Cloud MOSFET N-CH 55V 18A D2PAK 46000
RFQ
DISTI # 2726032
element14 Asia-Pacific MOSFET, N-CH, 55V, 18A, TO-263 RoHS: Compliant Min Qty: 1 Container: Cut Tape 8
  • 1 $1.2565
  • 10 $1.2343
  • 100 $1.2121
  • 500 $0.9460
  • 1,000 $0.7391
  • 5,000 $0.6216
$0.6216 / $1.2565 Buy Now
DISTI # 2726032RL
element14 Asia-Pacific MOSFET, N-CH, 55V, 18A, TO-263 RoHS: Compliant Min Qty: 100 Container: Reel 8
  • 100 $1.2121
  • 500 $0.9460
  • 1,000 $0.7391
  • 5,000 $0.6216
$0.6216 / $1.2121 Buy Now
DISTI # 2726032
Farnell MOSFET, N-CH, 55V, 18A, TO-263 RoHS: Compliant Min Qty: 1 Lead time: 11 Weeks, 1 Days Container: Cut Tape 8
  • 1 $1.3678
  • 10 $1.0679
  • 100 $0.7818
  • 500 $0.5233
  • 1,000 $0.4681
  • 5,000 $0.4543
$0.4543 / $1.3678 Buy Now
DISTI # 2726032RL
Farnell MOSFET, N-CH, 55V, 18A, TO-263 RoHS: Compliant Min Qty: 100 Lead time: 11 Weeks, 1 Days Container: Reel 8
  • 100 $0.7818
  • 500 $0.5233
  • 1,000 $0.4681
  • 5,000 $0.4543
$0.4543 / $0.7818 Buy Now
LCSC 55V 18A 60m11A10V 2V250uA 1PCSNChannel D2PAK MOSFETs ROHS 14
  • 1 $1.0311
  • 10 $0.8819
  • 30 $0.7983
  • 100 $0.7058
  • 500 $0.5775
  • 800 $0.5581
$0.5581 / $1.0311 Buy Now

Part Details for IRLZ24NSTRLPBF

IRLZ24NSTRLPBF CAD Models

IRLZ24NSTRLPBF Part Data Attributes:

IRLZ24NSTRLPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRLZ24NSTRLPBF Infineon Technologies AG Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 52 Weeks
Samacsys Manufacturer Infineon
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 68 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 72 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRLZ24NSTRLPBF

This table gives cross-reference parts and alternative options found for IRLZ24NSTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLZ24NSTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRLZ24NSPBF Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG IRLZ24NSTRLPBF vs IRLZ24NSPBF
IRLZ24NSTRR Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRLZ24NSTRLPBF vs IRLZ24NSTRR
IRLZ24NSTRRPBF Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier IRLZ24NSTRLPBF vs IRLZ24NSTRRPBF
IRLZ24NSPBF Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier IRLZ24NSTRLPBF vs IRLZ24NSPBF
IRLZ24NSTRRPBF Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG IRLZ24NSTRLPBF vs IRLZ24NSTRRPBF
IRLZ24NSTRLPBF Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier IRLZ24NSTRLPBF vs IRLZ24NSTRLPBF
IRLZ24NSTRL Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRLZ24NSTRLPBF vs IRLZ24NSTRL
Part Number Description Manufacturer Compare
IRLZ24NSPBF Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier IRLZ24NSTRLPBF vs IRLZ24NSPBF
IRLZ24NSTRRPBF Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier IRLZ24NSTRLPBF vs IRLZ24NSTRRPBF
IRLZ24NSTRRPBF Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG IRLZ24NSTRLPBF vs IRLZ24NSTRRPBF
IRLZ24NSTRLPBF Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier IRLZ24NSTRLPBF vs IRLZ24NSTRLPBF
IRLZ24NSTRL Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRLZ24NSTRLPBF vs IRLZ24NSTRL
IRLZ24NSPBF Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG IRLZ24NSTRLPBF vs IRLZ24NSPBF
IRLZ24NSTRR Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRLZ24NSTRLPBF vs IRLZ24NSTRR

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