Transistors
IRLZ34N
Description: Power Field-Effect Transistor, 27A I(D), 55V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

Overview of IRLZ34N by International Rectifier

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for IRLZ34N by International Rectifier

Part # Manufacturer Description Stock Price Buy
Quest Components MOSFET Transistor, N-Channel, TO-220AB 292
  • 1 $2.4160
  • 114 $1.2080
  • 249 $1.1174
$1.1174 / $2.4160 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 2
  • 1 $1.5100
$1.5100 Buy Now

CAD Models for IRLZ34N by International Rectifier
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Part Data Attributes for IRLZ34N by International Rectifier

IRLZ34N
International Rectifier
-
-
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC
Part Package Code
TO-220AB
Package Description
TO-220AB, 3 PIN
Pin Count
3
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Additional Feature
LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)
110 mJ
Case Connection
DRAIN
Configuration
SINGLE
DS Breakdown Voltage-Min
55 V
Drain Current-Max (ID)
27 A
Drain-source On Resistance-Max
0.035 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
56 W
Power Dissipation-Max (Abs)
56 W
Pulsed Drain Current-Max (IDM)
110 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IRLZ34N
    International Rectifier
    Power Field-Effect Transistor, 27A I(D), 55V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
    VS

Alternate Parts for IRLZ34N

This table gives cross-reference parts and alternative options found for IRLZ34N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLZ34N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRLZ34NPBF Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG IRLZ34N vs IRLZ34NPBF
IRLZ34N Power Field-Effect Transistor, 27A I(D), 55V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG IRLZ34N vs IRLZ34N
IRLZ34NPBF Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRLZ34N vs IRLZ34NPBF
IRLZ34N,127 IRLZ34N NXP Semiconductors IRLZ34N vs IRLZ34N,127
Part Number Description Manufacturer Compare
IRLZ34N 30A, 55V, 0.046ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB NXP Semiconductors IRLZ34N vs IRLZ34N
IRLZ34NPBF Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRLZ34N vs IRLZ34NPBF
IRLZ34N Power Field-Effect Transistor, 27A I(D), 55V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG IRLZ34N vs IRLZ34N
IRLZ34L Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN International Rectifier IRLZ34N vs IRLZ34L
IRLZ34N,127 IRLZ34N NXP Semiconductors IRLZ34N vs IRLZ34N,127
IRLZ34NPBF Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG IRLZ34N vs IRLZ34NPBF
IRLZ34NL Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN International Rectifier IRLZ34N vs IRLZ34NL
IRLZ34NLPBF Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN International Rectifier IRLZ34N vs IRLZ34NLPBF

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